Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3

Yang, Ching-Chyuan; Chen, Ming‐Sen; Hong, Tian–Jue; Wu, Chii–Ming; Wu, Jenn‐Ming; Wu, Tai–Bor

doi:10.1063/1.113111

Cited by 189 publications

(58 citation statements)

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“…In our case, the remnant polarization obtainedishigher than the value of 18.2 µC/cm 2 , as reported on LNO/Si substrate [14]. Othergroupshave also reported that the remnant polarizations were about 19.2 µC/cm 2 and 13.2 µC/cm 2 when the PZT thin films deposited on LNO/poly-Si/titanium nitride (TiN)/SiO 2 /Si wafer and LNO/SiO 2 /Si substrate, respectively [15,16]. Thus, it should be convinced thatthe PZT thin film deposited on LNO/Al foil at the annealing temperature of 600 o C possesses high remnant polarization enough for application of ferroelectric devices.…”

Section: Resultssupporting

confidence: 47%

Conductive-perovskite LaNiO3 thin films prepared by using solution process for electrode application

Trinh¹

2018

MaP

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Lanthanum nickel oxide LaNiO 3 (LNO) isextensively known as one of typical perovskite-structured materials with metallic conductivity, which is suitable for the electrode application in electronic devices such as transistors or solar cells. Since LNO is a low-cost material and a simple fabrication process, it has been attracted much attention for commercialization. In this paper, we have focused on optimizing the fabrication process of LNO thin films on SiO 2 /Sisubstrate and Al foil by using asolution process. The crystal structure and surface morphology were characterized by using X-ray diffraction and field-emission scanning electron microscopy (FE-SEM), respectively. It was found that the LNO thin films annealed in range of 550-700 o C for 30 minutes exhibited a well-formed crystallization and a dense microstructure. According to the SEM cross-sectional observation, the thickness of LNO thin films was estimated about 80 nm. Also, from the four-probe measurement method, the electrical resistivity of LNO thin film annealed at 600 o C had a minimum value of 0.42× 10 -2 Ωcm, which waspossibly comparable to conventional conductive oxides. As a result, thecapacitor using Pb 1.2 (Zr 0.4 Ti 0.6 )O 3 ferroelectric layer annealed at 600 o C and LNO bottom electrode providedan interesting ferroelectricity, which includeda remnant polarization of 21µC/cm 2 and a saturated polarization of 35µC/cm 2 . Moreover, the leakage current density was lower than 2 × 10 -5 A/cm 2 .

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Section: Resultssupporting

confidence: 47%

Conductive-perovskite LaNiO3 thin films prepared by using solution process for electrode application

Trinh¹

2018

MaP

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“…Stacking buffer layers with perovskite-type lattice surfaces is a prospective approach to achieve the crystal orientation of PZT films on versatile substrates. Some researchers have reported successful results (e.g., using CeO 2 /YSZ or SrTiO 3 buffer layers, 4,7,12 or one-axis-oriented (100)LaNiO 3 template 13,14 ) in which the preferential c-/a-domain formation was realized together with the variation of their ferroelectric/piezoelectric properties. Single-crystal nanosheets of calcium niobate (Ca 2 Nb 3 O 10 ) that possess a pseudo-perovskite-type crystal structure 15,16 are currently being utilized for the buffer layers to control the crystal orientation of perovskite-or layer-perovskite-type dielectric films (SrTiO 3 21 etc.)…”

Section: Introductionmentioning

confidence: 99%

Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

et al. 2015

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Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals Journal of Applied Physics 82, 1804 (1997) Lead zirconate titanate (PZT) film with polar axis orientation was grown on a SUS 316L stainless steel substrate with the help of a Ca 2 Nb 3 O 10 nanosheet (ns-CN) layer that had a pseudo-perovskite-type crystal structure. The ns-CN buffer layer was supported on a platinized SUS 316L (Pt/SUS) substrate, followed by chemical solution deposition (CSD) of the PZT films with tetragonal symmetry (Zr/Ti =40/60). The PZT films consisting of c-domain, with [001]-axis orientation of the perovskite unit cell, were deposited on the ns-CN/Pt/SUS substrate owing to (i) epitaxial lattice matching between the unit cell of PZT and substrate surface and (ii) in-plane thermal stress applied to the PZT film during cooling-down step of CSD procedure. The c-domain-oriented PZT film on ns-CN/Pt/SUS substrate exhibited enhanced remanent polarization of approximately 52 µC/cm 2 and lowered dielectric permittivity of approximately 230, which are superior to those of conventional PZT films with random crystal orientation and comparable to those of epitaxial PZT films grown on (100)SrRuO 3

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“…A method to control a certain orientation degree Contents lists available at ScienceDirect journal homepage: www.elsevier.com/locate/ceramint of a film just by tuning the thickness of a seed layer has not been proposed. In this study, different orientations were obtained in LaNiO 3 (LNO) films with different thickness on SiO 2 /Si substrates, which is different from previous reports [16,17]. Accordingly, we propose that differently oriented LNO films may be utilized as seed layers to control the growth of SRO films.…”

Section: Introductionmentioning

confidence: 84%

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

Zhu

Dong

Chen

et al. 2016

Ceramics International

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Preparation of (100)-oriented metallic LaNiO3 thin films on Si substrates by radio frequency magnetron sputtering for the growth of textured Pb(Zr0.53Ti0.47)O3

Cited by 189 publications

References 0 publications

Conductive-perovskite LaNiO3 thin films prepared by using solution process for electrode application

Conductive-perovskite LaNiO3 thin films prepared by using solution process for electrode application

Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

Growth control of RF magnetron sputtered SrRuO3 thin films through the thickness of LaNiO3 seed layers

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