Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer

Abstract

Ultrahigh strain and piezoelectric behavior in relaxor based ferroelectric single crystals Journal of Applied Physics 82, 1804 (1997) Lead zirconate titanate (PZT) film with polar axis orientation was grown on a SUS 316L stainless steel substrate with the help of a Ca 2 Nb 3 O 10 nanosheet (ns-CN) layer that had a pseudo-perovskite-type crystal structure. The ns-CN buffer layer was supported on a platinized SUS 316L (Pt/SUS) substrate, followed by chemical solution deposition (CSD) of the PZT films with tetragonal symmetry (Zr/Ti =40/60). The PZT films consisting of c-domain, with [001]-axis orientation of the perovskite unit cell, were deposited on the ns-CN/Pt/SUS substrate owing to (i) epitaxial lattice matching between the unit cell of PZT and substrate surface and (ii) in-plane thermal stress applied to the PZT film during cooling-down step of CSD procedure. The c-domain-oriented PZT film on ns-CN/Pt/SUS substrate exhibited enhanced remanent polarization of approximately 52 µC/cm 2 and lowered dielectric permittivity of approximately 230, which are superior to those of conventional PZT films with random crystal orientation and comparable to those of epitaxial PZT films grown on (100)SrRuO 3

One-axis-oriented growth of PZT thin films on transparent glass substrates using metal oxide nanosheets

“…serial connection of PZT and ns-CN, will be negligible because the ns-CN would disappear owing to the solid-state diffusion by heat treatment for the crystallization; we had already reported the solubility of ns-CN with CSD-derived PZT layer in our previous work. 36) Therefore, in the present work, PZT thin film on an ns-CN/ITO glass substrate [with a preferential (00l) orientation] should exhibit a lower ε r value than PZT thin film on an ITO/glass substrate (with a random crystal orientation).…”

Polarization switching behavior of one-axis-oriented lead zirconate titanate films fabricated on metal oxide nanosheet layer

“…Platinized silicon substrates with ns-CN template layer (ns-CN=Pt=Si) were prepared by the dip coating method, similarly to that in previous reports. [27][28][29][30][31] The size of the substrates was ∼10.0 × 5.0 mm 2 .…”

“…As for the crystal growth of PZT, we have confirmed the preferential crystal growth of tetragonal PZT(001) or (100) films, controlled by in-plane thermal stress, up to the thickness of 300 nm, as well as the enhancement or degradation of their ferroelectric property depending on the crystal orientation. 30,31) For further evaluation of the preferential crystal growth of PZT films and their behavior of ferroelectric polarization, in the present research, the film deposition on ns-CN templates was extended to the order of micrometers which is commonly required for the fabrication of various ferroelectric=piezoelectric devices such as MEMS, piezosensors, and energy harvesters. We report here the fabrication of oriented PZT films on ubiquitous Si substrates buffered by ns-CN, the thickness dependence of the crystal orientation, and its unique polarization behavior related to domain switching.…”

Influence of two-dimensional oxide nanosheets seed layers on the growth of (100)BiFeO3 thin films synthesized by chemical solution deposition

“…The synthesis of oxide nanosheets is based on the exfoliation of layered phases [1][2][3][4][5][6]24]. In this present work, the layered perovskite Dion-Jacobson KCa…”

“…Highly oriented perovskites (SrTiO 3 , Pb(Zr,Ti)O 3 , etc.) and binary oxide films (such as TiO 2 , ZnO) have been obtained on glass, silicon or stainless steel substrates using 2D nanosheets seed layers with different crystallographic properties in the 2D network, for example square lattice for Ca 2 Nb 3 O 10 or hexagonal lattice for MoO 2 0.4- [1][2][3][4][5][6].…”