Preparation of CdTe thin films on Ge substrates by molecular beam epitaxy

Matsumura, N.; Ohshima, Takefumi; Saraie, Junji; Yodogawa, Y.

doi:10.1016/0022-0248(85)90092-2

Cited by 28 publications

(5 citation statements)

References 18 publications

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“…A few results on CdTe/Ge growth have already been presented using Ge as bulk material 12 and as buffer layer on Si. We prefer Ge for its easy surface preparation prior growth.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors

Zanatta

Ferret

Théret

et al. 1998

Journal of Elec Materi

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“…A few results on CdTe/Ge growth have already been presented using Ge as bulk material 12 and as buffer layer on Si. We prefer Ge for its easy surface preparation prior growth.…”

Section: Introductionmentioning

confidence: 99%

Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors

Zanatta

Ferret

Théret

et al. 1998

Journal of Elec Materi

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“…One of the most important strategies to create high crystallinity films is to grow them epitaxially on single crystal substrates. The techniques used to grow CdTe films are rich, including but not limited to molecular beam epitaxy [1,2], e-beam evaporation [3], hot wall epitaxy [4], close space sublimation [5], high vacuum evaporation [6], chemical bath deposition [7], and metalorganic chemical vapor deposition [8]. Examples of single crystal substrates used are Si [2,4,9,10], Ge [1,3,5,8,11], CdTe [12,13], CdS [12,14], GaAs [8,[15][16][17][18][19][20][21], Al 2 O 3 [22], and SrTiO 3 [23].…”

Section: Introductionmentioning

confidence: 99%

“…Mica is also chemically inert (K 2 O•Al 2 O 3 •SiO 2 ) and thermally stable up to about 700 o C. We chose CdS as the buffer layer since it has been widely used as the window layer in CdTe/CdS solar cell applications [37]. We report our key contributions: (1) We succeeded in growing a stack of epitaxial CdTe/CdS films on mica. A continuous epitaxial CdS film was grown first through van der Waals interaction on a mica substrate by thermal evaporation without intentional heating of mica.…”

Section: Introductionmentioning

confidence: 99%

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Yang

Seewald

Mohanty

et al. 2017

Applied Surface Science

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Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection highenergy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 � 21 � ] CdTe //[1100] CdS //[010] mica , respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

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“…A number of techniques of deposition were adopted to obtain CdTe thin films (Feldman et al 1981;Gongoi and Barua 1982;Anthony et al 1984;Matsumoto et al 1984;Takahashi et al 1984;Wang and Reinhard 1984;Matsumura et al 1985;Gayle and Biancaniello 1995). All these techniques have their own merits and demerits in producing high-quality CdTe films.…”

Section: Introductionmentioning

confidence: 99%

Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

2012

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Highly-oriented CdTe thin films were fabricated on quartz and glass substrates by thermal evaporation technique in the vacuum of about 2 × 10 −5 torr. The CdTe thin films were characterized by X-ray diffraction (XRD), UV-VIS-NIR, photoluminescence spectroscopy and scanning electron microscopy (SEM). X-ray diffraction results showed that the films were polycrystalline with cubic structure and had preferred growth of grains along the (111) crystallographic direction. Scanning electron micrographs showed that the growth of crystallites of comparable size on both the substrates. At the room temperature, photoluminescence spectra of the films on both the substrates showed sharp peaks with a maximum at 805 nm. This band showed significant narrowing suggesting that it originates from the transitions involving grain boundary defects. The refractive index of CdTe thin films was calculated using interference pattern of transmission spectra. The optical band gap of thin films was found to allow direct transition with energy gap of 1•47-1•50 eV. a.c. conductivity of CdTe thin films was found to increase with the increase in frequency whereas dielectric constant was observed to decrease with the increase in frequency.

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Preparation of CdTe thin films on Ge substrates by molecular beam epitaxy

Cited by 28 publications

References 18 publications

Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors

Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

Structural, optical, photoluminescence, dielectric and electrical studies of vacuum-evaporated CdTe thin films

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