Preparation of Cu₂ZnSnS₄ thin film solar cells under non‐vacuum condition

Abstract

Cu2ZnSnS4 (CZTS) thin film solar cells have been fabricated with the all semiconductor layers prepared under non‐vacuum conditions. For the solar cell structure of Al/ZnO:Al/CdS/CZTS/Mo/Soda Lime Glass (SLG) substrate, ZnO:Al window, CdS buffer and CZTS absorber layers were deposited by sol‐gel, chemical bath deposition (CBD) and sol‐gel sulfurizing methods, respectively. Since the CdS buffer layer plays an important role in the final photovoltaic properties of thin film solar cells, an optimum condition of the CdS deposition was first determined. As a result of the investigations, the best solar cell showed an open circuit voltage of 554 mV, a short current density of 6.70 mA/cm2, a fill factor of 43.4% and a conversion efficiency of 1.61%. This is the highest conversion efficiency to date of the CZTS solar cell prepared under non‐vacuum conditions. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

High‐Efficiency Solar Cell with Earth‐Abundant Liquid‐Processed Absorber

“…[7,8] Here we show a non-vacuum, slurry-based coating method that combines advantages of both solution processing [10][11][12][13] and particlebased deposition, [14][15][16][17] enabling fabrication of Cu 2 ZnSn(Se,S) 4 devices with over 9.6% efficiency-a factor of five performance improvement relative to previous attempts to use highthroughput ink-based approaches [16][17][18] and >40% higher than previous record devices prepared using vacuum-based methods. [7] …”

Electrical and optical properties of CZTS thin films prepared by SILAR method

“…The structure of the solar cells was Al/ZnO:Al/CdS/CZTS/Mo/Soda Lime Glass substrate and the Power Conversion Efficiency (PCE) of the cell was 1.61% [4]. Sudip K. Saha et al prepared CZTS-fullerene hybrid p-n junction solar cells by hot injection method and have reported 0.9% PCE [5].…”

Inverted polymer solar cells with indium sulfide electron selective layer

“…R sh decreases from 16.67 to 3.92 kO cm 2 on increasing the In 2 S 3 thickness of the device. It was calculated from the inverse slope of the illuminated J-V characteristics at V ¼0 [11,20]. Usually the surface of thin films is composed of hills and valleys, which will be more pronounced in sprayed films.…”