Preparation of KTiOPO4 thin films on different substrates by pulsed laser deposition

Vasa, Nilesh J.; Hata, Yasunari; Yoshitake, Tsuyoshi; Yokoyama, Shigeru

doi:10.1007/s00170-007-1040-x

Cited by 6 publications

(1 citation statement)

References 12 publications

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“…The PLD experimental setup similar to that reported elsewhere [27,28] was used for the growth of SiC thin films. A Q-switched Nd 3+ :YAG laser pulses of 355 nm wavelength, 6 ns pulse width and 10 Hz repetition rate was used for the laser ablation of a SiC target target (20 mm diameter × 5 mm thickness).…”

Section: Methodsmentioning

confidence: 99%

Selective area laser-assisted doping of SiC thin films and blue light electroluminescence

Paneerselvam

Kikuchi

Ikenoue

et al. 2019

J. Phys. D: Appl. Phys.

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Laser-assisted doping combined with annealing technique is used in selective areas to form a p-n junction on a SiC thin film grown by the pulsed laser deposition on a Si substrate at a temperature of 800 °C. This approach in an aluminum chloride solution and a phosphoric solution has resulted in p-SiC/n-Si and n-SiC/p-Si hetero-structures, respectively. Further, a functional in-plane p-n junction is realized side-by-side on the post-deposited SiC thin film. I-V characteristics by two probe technique showed the p-n diode characteristics. Blue light (400 nm) electroluminescence from the p-n junction on SiC thin film was observed in the forward biased condition. Further, an improvement in the I-V reverse characteristics was observed by illuminating the p-n SiC thin film with green/blue light.

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Section: Methodsmentioning

confidence: 99%