Preparation of Pb(Zr, Ti)O₃ Films on Pt/Ti/Ta Electrodes by Sol-Gel Process

Abstract

Tl 2 Ba 2 Ca 1 Cu 2 O x thin films on (001) LaAlO 3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740 • C. Surface resistance values as low as 400 µ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 10 5 A cm −2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance.

Improvement of ferroelectric random access memory manufacturing margin by employing Pt/AlOxbottom electrode for the La-doped Pb(Zr,Ti)O3ferroelectric capacitor

“…39,40) Several authors suggested that Ti (or TiO x ) affects the nucleation of the PZT layer and its orientation. 27,[41][42][43][44][45][46][47][48] We measured the temporal changes in XRD intensity during the PLZT-PDA of PLZT {111}, PLZT {100}, PLZT {110}, and pyro {222} from specimen B (PLZT on Pt=Ti in Table I) with Pt-PDA (data not shown). The PPT speed of specimen B with Pt-PDA was higher than that of specimen A without Pt-PDA.…”