Surface morphology of lead-zirconate-titanate [PZT(52/48)] thin films prepared by sol-gel processing on Pt/Ti/ SiO2/Si substrates was studied. When the atomic ratio [Pb/(Zr+Ti)] of PZT gel films was 1, rosette structure was observed in the films after annealing at 600° C for one hour. The crystal structure of the rosette was identified as perovskite and that of the other area was nonperovskite, by electron diffraction analysis. Lead deficiency in the non-perovskite phase caused by lead diffusion into the bottom electrode was detected by energy dispersive X-ray spectroscopy and Auger electron spectroscopy. In order to prepare PZT films with a smooth surface, the following four means were efficient: addition of lead excess, rapid thermal annealing (RTA), adoption of buffer layer, and preparation of crystal nucleus on the substrate.

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The photo sensitivity of sol-gel solution of PbZr x Ti1-x O3 (PZT) was studied. A coated film of the sol-gel solution on Pt/Ti/SiO2/Si substrates was exposed to an excimer laser and developed with water. The film was finally annealed at 700°C for 60 s by rapid thermal annealing (RTA). Ferroelectric perovskite phase was observed in the PZT thin films. The 130-nm-thick film showed P r of 11.2 µ C/cm2 and E c of 93.8 kV/cm. From this process, half-micron patterns of PZT films were obtained.

Tl 2 Ba 2 Ca 1 Cu 2 O x thin films on (001) LaAlO 3 with excellent alignment suitable for microwave applications at 77 K have been fabricated using an ex situ anneal step in argon atmospheres at temperatures of 720-740 • C. Surface resistance values as low as 400 µ (79 K, 10 GHz) and large-area critical current densities up to 3.4 × 10 5 A cm −2 (77 K) have been achieved. In order to understand the relationship between the microstructure and electrical properties the films have been characterized by a variety of techniques, but especially transmission electron microscopy and allied methods. Microstructural features such as a-axis oriented grains, secondary phase particles, grain boundaries and surface outgrowths (especially of non-superconductor phases) have been found to have a significant effect on the surface resistance.

Building a model that can describe electrical behavior of ferroelectric capacitors, such as Q‐V hysteresis loops, transient switching charge, and current curves, is essential in order to simulate ferroelectric memory operations. We built a simplified model for hysteresis loops by considering two terms, one related to polarization reversal and the other expressing saturation phenomena unrelated to the polarization reversal. Results of bit line potential analyses of 1T1C type ferroelectric memory with this model are presented, as well as an outline of the model. © 1998 Scripta Technica. Electron Comm Jpn Pt 2, 80(10): 1–8, 1997