Heterolayered Pb(Zr 1−x Ti x )O 3 thin films consisting of alternating PbZr 0.7 Ti 0.3 O 3 and PbZr 0.3 Ti 0.7 O 3 layers were successfully deposited via a multistep sol-gel route assisted by spin-coating. These heterolayered PZT films, when annealed at a temperature in the range of 600-700 • C show (001)/(100) preferred orientation, demonstrate desired ferroelectric and dielectric properties. The most interesting ferroelectric and dielectric properties were obtained from the six-layered PZT thin film annealed at 650 • C, which exhibits a remanent polarization of 47.7 μC/cm 2 and a dielectric permittivity of 1002 at 100 Hz. Reversible polarization constituents a considerably high contribution towards the ferroelectric hysteresis of the heterolayered PZT films, as shown by studies obtained from C-V and AC measurement.