Preparation of Pb(Zr,Ti)O3 thin films on electrodes including IrO2

Nakamura, Takashi; Nakao, Yukimichi; Kamisawa, Akira; Takasu, H.

doi:10.1063/1.112031

Cited by 311 publications

(104 citation statements)

References 3 publications

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“…7 Several other groups also reported on these subjects. 5,15 Despite the 9.8% lattice mismatch between La 0.5 Sr 0.5 CoO 3 and ͑100͒MgO, heteroepitaxial growth is observed in XRD pole-figures and TEM analyses. 16 XRD patterns of La 0.5 Sr 0.5 CoO 3 films on MgO͑100͒ showed only sharp (00l) diffraction peaks and a lattice spacing of 0.382 Ϯ0.002 nm was determined.…”

Section: Resultsmentioning

confidence: 99%

“…18 For the C-type capacitors, a columnar growth with a preferential (00l) orientation is observed for both La 0. 5 Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

“…Several groups reported on the growth and crystallographic characterization of ferroelectric thin films in combination with a variety of oxidic electrode materials. [5][6][7] Ramesh et al 8 9 Important questions remain as to the nature of the electrode-ferroelectric interface. For example, it is unclear if the near-electrode material is ferroelectric and if charge injection is of importance.…”

Section: Introductionmentioning

confidence: 99%

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Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Cillessen¹,

Prins²,

Wolf³

1997

Journal of Applied Physics

164

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Thin-film ferroelectric capacitors consisting of PbZr 0.53 Ti 0.47 O 3 sandwiched between La 0.5 Sr 0.5 CoO 3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (E c ) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of E c and a good endurance up to 10 11 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of E c with decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase of E c with decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr 0.53 Ti 0.47 O 3 films, because the precise stoichiometry is of the utmost importance for the capacitor quality.

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Section: Resultsmentioning

confidence: 99%

“…18 For the C-type capacitors, a columnar growth with a preferential (00l) orientation is observed for both La 0. 5 Fig. 4.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Cillessen¹,

Prins²,

Wolf³

1997

Journal of Applied Physics

164

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“…1,2) IrO 2 thin films can be formed by oxidization of Ir thin films in O 2 at above 773 K. Since Ir was not easily oxidized to form pure IrO 2 below 973 K, Ir phase may exist in IrO 2 thin films. However, at high oxidization temperature over 973 K, Ir may easily evaporate to form IrO 3 vapor.…”

Section: Introductionmentioning

confidence: 99%

Electrical and Optical Properties of IrO<SUB>2</SUB> Thin Films Prepared by Laser-ablation

2004

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IrO 2 thin films were prepared by laser ablation using an Ir target at substrate temperatures (T sub ) from room temperature (RT) to 873 K in an oxygen atmosphere. A small amount of Ir metal was contained in IrO 2 films prepared at T sub ¼ RT. The lattice parameters particularly a-axis values decreased with increasing T sub , and the values were a ¼ 0:452 nm, c ¼ 0:315 nm at T sub ¼ 873 K in agreement with those of bulk IrO 2 . The surface roughness increased from 1.2 to 5.2 nm with increasing T sub . These values imply that the IrO 2 films were far smoother than those prepared by MOCVD and sputtering. The electrical conductivity of IrO 2 films prepared at T sub ¼ RT changed from semiconductor-like to metallic behavior after a heat-treatment; on the other hand, those prepared at T sub > 573 K were metallic without changing after heat-treatment. The IrO 2 films prepared at T sub ¼ 873 K showed the highest electrical conductivity of 37 Â 10 À8 m at RT. The optical transmittance of IrO 2 thin films were mainly dependent on thickness and surface roughness, and were around 10% at a wavelength range from 300 to 800 nm.

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“…Remanent polarization and coercive field of IrO 2 /PZT/Ir/poly-Si capacitor with the top electrodes deposited at P O 2 ϭ1 mTorr was 20 C/cm 2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 10 11 switching repetitions. The leakage current density at a field of 80 kV was 5ϫ10 Ϫ8 A/cm 2 …”

mentioning

confidence: 99%

Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties

Lee

Tirumala

Desu

1999

Applied Physics Letters

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We have investigated the structural and electrical properties of sol-gel derived Pb(Zr, Ti)O3 (PZT) thin films deposited on Ir electrode barrier (Ir/poly-Si/SiO2/Si). Owing to the interface-controlled growth, highly c-axis oriented perovskite PZT thin films were obtained for the postdeposition annealing temperature of 580 °C. Additionally, we found that the ferroelectric properties of IrO2/PZT/Ir/poly-Si capacitors were remarkably changed by the partial pressure of oxygen during the deposition of IrO2 top electrodes, which could be due to the enhanced reaction of IrO2 with PZT by the oxygen ion bombardments. Remanent polarization and coercive field of IrO2/PZT/Ir/poly-Si capacitor with the top electrodes deposited at PO2=1 mTorr was 20 μC/cm2 and 30 kV/cm, respectively, and showed negligible polarization fatigue up to 1011 switching repetitions. The leakage current density at a field of 80 kV was 5×10−8 A/cm2.

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Preparation of Pb(Zr,Ti)O3 thin films on electrodes including IrO2

Cited by 311 publications

References 3 publications

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Electrical and Optical Properties of IrO<SUB>2</SUB> Thin Films Prepared by Laser-ablation

Highly c-axis oriented Pb(Zr, Ti)O3 thin films grown on Ir electrode barrier and their electrical properties

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