Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent

Abstract

Pb(Zr, Ti)O 3 thin films were grown on 8-inch Ir(111)/SiO 2 /Si substrate by a MOCVD system aiming at application utilizing high-density ferroelectric memory (FRAM). Two types of solvents, THF and cyclohexane were used for liquid source delivery. It was found that the ferroelectric properties of the MOCVD-PZT films using cyclohexane solvent were better than them using THF solvent. By choosing cyclohexane as solvent, the MOCVD-PZT thin films showed strong 111 preferred orientation and the Pt/PZT/Ir capacitors exhibited promising ferroelectric performances, for instance, large switching charge (Qsw) of 56.4 uC/cm 2 .

Thin-Film Process Technology for Ferroelectric Application

“…14. [11,12] In addition excellent endurance properties which are over 10 10 cycles were obtained for 73nm-PZT in Fig 15. Recently mass production tool for 300mm Si wafer was developed and excellent in-plane uniformity less than 1.5% for thickness and PZT composition were obtained.…”