No abstract

Pb(Zr, Ti)O 3 thin films were grown on 8-inch Ir(111)/SiO 2 /Si substrate by a MOCVD system aiming at application utilizing high-density ferroelectric memory (FRAM). Two types of solvents, THF and cyclohexane were used for liquid source delivery. It was found that the ferroelectric properties of the MOCVD-PZT films using cyclohexane solvent were better than them using THF solvent. By choosing cyclohexane as solvent, the MOCVD-PZT thin films showed strong 111 preferred orientation and the Pt/PZT/Ir capacitors exhibited promising ferroelectric performances, for instance, large switching charge (Qsw) of 56.4 uC/cm 2 .

No abstract

Thin Pb(Zr, Ti)O3 films were grown on a 8-inch Ir(111)/SiO2/Si substrate by a liquid-source MOCVD system. These films showed dependency of ferroelectric properties on several deposition parameters. PZT single phase was obtained at a substrate temperature of 620°C. The film showed (111) preferred orientation and the Pt/Pb1.16(Zr0.45, Ti0.55)Ox(115nm)/Ir capacitors had excellent ferroelectric properties. The switching charge (Qsw) value (at 2V), saturation voltage (V90) and leakage current density (at 1.5V) were 47.4uC/cm2, 1.7V and 7.5E-8A/cm2 respectively. The capacitor made by using an IrOx top electrode had excellent fatigue-free property.

No abstract