Uniformity of PZT Thin Films Prepared by MOCVD on 8"φ Substrate

Masuda, Takeshi; Kajinuma, Masahiko; Yamada, T.; Uchida, Hiroto; Uematsu, Masaki; Suu, Koukou; Ishikawa, M.

doi:10.1080/713718264

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2003

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“…In our previous study, we reported development activity of MOCVD system for mass-production [12]. Our system was achieved good uniformity of Pb(Zr, Ti)O 3 (PZT) thin films and excellent repeatability.…”

Section: Introductionmentioning

confidence: 84%

Preparation of PZT Thin Films by Liquid-Source MOCVD Using of Cyclohexane Solvent

Nishioka¹,

Masuda²,

Kajinuma³

et al. 2003

Integrated Ferroelectrics

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Pb(Zr, Ti)O 3 thin films were grown on 8-inch Ir(111)/SiO 2 /Si substrate by a MOCVD system aiming at application utilizing high-density ferroelectric memory (FRAM). Two types of solvents, THF and cyclohexane were used for liquid source delivery. It was found that the ferroelectric properties of the MOCVD-PZT films using cyclohexane solvent were better than them using THF solvent. By choosing cyclohexane as solvent, the MOCVD-PZT thin films showed strong 111 preferred orientation and the Pt/PZT/Ir capacitors exhibited promising ferroelectric performances, for instance, large switching charge (Qsw) of 56.4 uC/cm 2 .

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Section: Introductionmentioning

confidence: 84%