Preparation of SiO₂Film by Photo-Induced Chemical Vapor Deposition Using a Deuterium Lamp and Its Annealing Effect

Abstract

Silicon dioxide thin films have been prepared at low temperatures from SiH4 and O2 by direct photo-induced CVD using a deuterium lamp. The growth rate is 75 Å/min at 84°C while no growth occurs below 180°C without deuterium lamp irradiation. UV and VUV light irradiation and an increase of the substrate temperature have effects of increasing the refractive index, and decreasing H incorporation and the amount of the oxide charge. The photo-CVD films deposited above 180°C show refractive indices of 1.45–1.46. Annealing in an O2 environment decreases the infrared absorptions due to Si–H stretching, Si–OH deformation and Si2O3 bondings as well as the oxide charge. The activation energies of the Si–H, the Si–OH deformation, the Si2O3 and the oxide charge obtained from the annealing characteristics are 0.18–0.19, 0.12, 0.19 and 0.12–0.13 eV, respectively. The reduction of Si–OH deformation absorption is considered to be closely related to the reduction of oxide charge.

Compositional and electrical properties of Si metal–oxide–semiconductor structure prepared by direct photoenhanced chemical vapor deposition using a deuterium lamp

“…3. 33,34 In our experiments, the absorption signal near 630 cm Ϫ1 can be seen in the SiO 2 /Si, but does not appear in the SiO 2 /InP and SiO 2 /GaAs structures. This suggests that the Si-O bonding of the photo-CVD is as strong as in the thermally grown oxide.…”

Ultraviolet‐Induced Deposition of SiO2 Film from Tetraethoxysilane Spin‐Coated on Si

“…33 These radicals promote the hydrolysis reaction. OH-substituted monomers generated by the hydrolysis then react with each other or with TEaS to generate oligoethoxysilanes such as Si20(OC2H~)~ which contain the St--O--St bridging bond H5C20 -Si -OH + HO -Si -OC2H5 ---> H5C20 -Si -O -Si -OC~H5 + H20 [2] HsC~O -Si -OC~H~ + Ha -Si -OC2H~ -~ H~C20 -Si -O -Si -OC2H~ + C2H~OH [3] These processes can be referred to as polymerization or condensation. Water and ethyl alcohol are released by the polymerization.…”

Photo-CVD process for ultra thin SiO2 films

“…The use of photo-enhanced chemical vapor deposition (photo-CVD) technique has been reported before to obtain good quality layers of SiO 2 [1][2][3][4] using O 2 [1,2] or N 2 O [3] and NO 2 [4] to provide oxygen atoms. Oxygen precursors can be dissociated using a wavelength of less than 160, 175-195 and 106 nm, respectively.…”

“…Oxygen precursors can be dissociated using a wavelength of less than 160, 175-195 and 106 nm, respectively. Low pressure mercury lamp [2,3], deuterium lamp [1], microwave excited argon discharge lamp [4] and a 200 mJ, 50 Hz, 23 ns duration pulse ArF laser [7] are some of the light sources reported for photo-dissociation of the above mentioned gases. Deposition of Si 3 N 4 using a low pressure mercury lamp has also been reported [5].…”

“…Low density of states has also been reported at SiO 2 -Si interfaces using SiO 2 layers obtained by photo-CVD, [1][2][3]6].…”