2014
DOI: 10.1103/physrevlett.112.117801
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Pressure-Dependent Relaxation in the Photoexcited Mott InsulatorETF2TCNQ: Influence of Hopping and Correlations on Quasiparticle Recombination Rates

Abstract: We measure the ultrafast recombination of photoexcited quasiparticles (holon-doublon pairs) in the one dimensional Mott insulator ET-F 2 TCNQ as a function of external pressure, which is used to tune the electronic structure. At each pressure value, we first fit the static optical properties and extract the electronic bandwidth t and the intersite correlation energy V. We then measure the recombination times as a function of pressure, and we correlate them with the corresponding microscopic parameters. We find… Show more

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Cited by 68 publications
(62 citation statements)
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“…[27]. In the limit of large ≫ , it is possible to analyze the extended Hubbard model by means of a 1/ expansion [28].…”
Section: A Steady State Theory Fit Of the Optical Conductivitymentioning
confidence: 99%
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“…[27]. In the limit of large ≫ , it is possible to analyze the extended Hubbard model by means of a 1/ expansion [28].…”
Section: A Steady State Theory Fit Of the Optical Conductivitymentioning
confidence: 99%
“…As discussed in Refs. [26,27,28], the charge transfer band of ET-F2TCNQ in equilibrium is described by two dominant contributions to the optical conductivity (see Fig. 4c).…”
mentioning
confidence: 99%
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“…Signatures of strong electron-phonon coupling and polaronic effects in photo-excited systems have been found for the self-trapping of excitons [8][9][10][11], in Mott insulators [12,13], and organic materials [14][15][16]. A direct observation of the self-localization process was achieved by two-photon photoemission for electrons in surface states which couple to adsorbate layers [17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%