2023
DOI: 10.1039/d3dt00899a
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Pressure-driven structural phase transitions and metallization in the two-dimensional ferromagnetic semiconductor CrBr3

Meiling Hong,
Lidong Dai,
Haiying Hu
et al.

Abstract: A systematic and detailed investigation on the high-pressure structural, electrical transport and magnetic properties was conducted for CrBr3.

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Cited by 8 publications
(9 citation statements)
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“…Importantly, both the high electrical conductivity value of 0.041 S cm −1 at 33.1 GPa and the weak dependence of the electrical conductivity on pressure at a feeble rate of 0.078 S cm −1 GPa −1 are the representative signatures of metallization in SbI 3 . 12–16,22 Upon decompression, two prominent inflection points in electrical conductivity at 28.9 GPa and 3.0 GPa were correlated to the reversal of phase transitions, and the unrecoverable electrical conductivity magnitude further validated the irreversibility of the phase transition. Noteworthily, the recovered sample possesses superior electrical transport properties compared to the starting sample with a substantial improvement in the electrical conductivity by six orders of magnitude after pressure treatment, which may inspire the development of high-performance optoelectronic devices in SbI 3 .…”
Section: Resultsmentioning
confidence: 93%
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“…Importantly, both the high electrical conductivity value of 0.041 S cm −1 at 33.1 GPa and the weak dependence of the electrical conductivity on pressure at a feeble rate of 0.078 S cm −1 GPa −1 are the representative signatures of metallization in SbI 3 . 12–16,22 Upon decompression, two prominent inflection points in electrical conductivity at 28.9 GPa and 3.0 GPa were correlated to the reversal of phase transitions, and the unrecoverable electrical conductivity magnitude further validated the irreversibility of the phase transition. Noteworthily, the recovered sample possesses superior electrical transport properties compared to the starting sample with a substantial improvement in the electrical conductivity by six orders of magnitude after pressure treatment, which may inspire the development of high-performance optoelectronic devices in SbI 3 .…”
Section: Resultsmentioning
confidence: 93%
“…According to the solid-state physics theory, a semiconductor has a positive temperature dependence relationship with the electrical conductivity, while a negative temperature dependence relationship with the electrical conductivity is observed for a metal. 12–16,22,32–34 It can be seen from Fig. 5 and 6a that SbI 3 underwent a semiconductor-to-metal transformation as the pressure was enhanced above 33.5 GPa, which was demonstrated by the conversion from positive to negative in the temperature dependence of the electrical conductivity relationship.…”
Section: Resultsmentioning
confidence: 93%
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“…Nevertheless, the well-resolved lattice fringes and the well-defined diffraction spots for the decompressed sample under hydrostatic conditions relative to those under nonhydrostatic conditions can be reasonably interpreted by the presence of PM, resembling other representative two-dimensional (2D) layered compounds (e.g., CrCl 3 , CrBr 3 , HfS 2 , etc.). 26,41,54 3.5. First-Principles Theoretical Calculation Results.…”
Section: Temperature-dependent Electrical Conductivity Resultsmentioning
confidence: 99%