Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing

Kano, Emi; Otsuki, Ritsuo; Kobayashi, Koki; Kataoka, Keita; Sierakowski, Kacper; Boćkowski, M.; Nagao, Masahiro; Narita, Toshio; Kachi, Tetsu; Ikarashi, Nobuyuki

doi:10.1002/pssr.202300035

Physica Rapid Research Ltrs

2023

DOI: 10.1002/pssr.202300035

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Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing

Emi Kano

Ritsuo Otsuki

Koki Kobayashi

et al.

Abstract: Herein, transmission electron microscopy direct observations are used to examine the time evolution of dislocation loops in Mg‐ion‐implanted GaN during annealing in N2 atmospheres of 2.0 and 0.3 GPa. It is indicated in the results that the diffusion of the native defects, for both interstitials and vacancies, is retarded during annealing at the higher pressure. Furthermore, secondary ion mass spectrometry shows that annealing at the higher pressure retards the migration of Mg and increases Mg‐acceptor concentr… Show more

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2024

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Cited by 3 publications

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Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Kano,

Uzuhashi,

Kobayashi

et al. 2024

Physica Rapid Research Ltrs

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In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion‐implanted region and the underlying region after activation annealing. We investigated the impact of sequential N ion implantation on defects and Mg distribution after post‐implantation annealing. Our atomic‐resolution analyses showed that, in the Mg ion‐implanted region, the N ion implantation increases the concentration of MgGa. We thus conclude that the Mg soluble in GaN by Mg ion implantation was increased by N ion implantation. The rest of the Mg atoms agglomerate to form clusters on the extended defects, and their concentration is also increased by the N implantation. The coarsening of extended defects was suppressed by the N ion implantation: the defects in the Mg+N implanted sample were nano‐scale interstitial‐type defects, and they did not grow or annihilate after annealing. This indicates that the N implantation changed the concentrations of interstitials.This article is protected by copyright. All rights reserved.

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Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Kano,

Uzuhashi,

Kobayashi

et al. 2024

Physica Rapid Research Ltrs

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Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Huynh,

Wang,

Liao

et al. 2024

Journal of Applied Physics

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Annealing Mg-implanted homoepitaxial GaN at temperatures above 1400 °C eliminates the formation of inversion domains and leads to improved dopant activation efficiency. Extended defects, in the form of inversion domains, contain electrically inactive Mg after post-implantation annealing at temperatures as high as 1300 °C (one GPa N2 overpressure), which results in a low dopant activation efficiency. Triple-axis x-ray data reveal that implant-induced strain is fully relieved after annealing at 1300 °C for 10 min, indicating that strain-inducing point defects formed during implantation have reconfigured and inversion domains are formed. However, annealing at temperatures of 1400–1500 °C (one GPa N2 overpressure) eliminates the presence of the inversion domains. While residual defects, such as dislocation loops, still exist after annealing at and above 1400 °C, chemical analysis at multiple dislocation loops shows no sign of Mg segregation. Meanwhile, an overall decreasing trend in the dislocation loop density is observed after annealing at the higher temperatures and longer times. Additionally, once inversion domains are formed and the samples are cooled to room temperature, they are shown to dissolve with subsequent annealing above 1400 °C. While such defects have been observed before, the important finding that such defects can be dissolved with a short, higher temperature step is key. Earlier work [Breckenridge et al., J. Appl. Phys. Lett. 118, 022101 (2021)] addressing electrical measurements of these types of samples showed that annealing at 1400 °C leads to a dopant activation efficiency that is an order of magnitude higher than that observed at 1300 °C. This work complements earlier work by identifying the inversion domains, which incorporate Mg, and points to the benefits, in terms of defect density and p-type dopant activation, of using higher temperature (>1400 °C) annealing cycles to activate Mg in GaN, even if the Mg-containing inversion domains had been formed during lower temperature annealing.

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Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN

Kataoka,

Narita,

Tomita

et al. 2024

Applied Physics Letters

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Toward p-type GaN formation by Mg ion implantation (I/I) applicable to devices, depth-resolved photoluminescence (PL) revealed key behaviors during activation annealing for precise profile control, such as Mg substitution into Ga-sites (MgGa) and recovery of I/I defects. Depth profiles of the MgGa acceptor concentration were measured for Mg-I/I and Mg/N-I/I samples after ultra-high-pressure annealing at 1300 °C for 1–60 min. The cycle of low-damage dry etching and PL measurement was repeated over the I/I depth, and the MgGa concentration was estimated at each depth based on the calibration curve for the PL intensity ratio between acceptor-bound excitons (A0XA) and free excitons (FXA). In the region deeper than the I/I peak of 0.3 μm, almost all of the Mg atoms rapidly substituted into Ga-sites during the short annealing process. By contrast, the Mg substitution ratios in the shallower region were low when the annealing process was short but were improved by the sequential N-I/I. The low substitution ratio can be explained by MgGa bonding with nitrogen vacancy (VN)-related defects, while the implanted N-ions can compensate them. The PL intensity near the mean implantation depth of Mg/N-I/I was gradually improved as the annealing duration was increased to 60 min, indicating a slow reduction of nonradiative recombination centers. Simultaneously, the green luminescence associated with the VN-related defects decreased in intensity with increasing annealing time. Therefore, the main effect of prolonging annealing is the enhancement of slow defect recovery rather than enhancement of the Mg substitution as a fast process.

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Pressure Effect on Diffusion of Native Defects and Mg Impurity in Mg‐Ion‐Implanted GaN during Ultrahigh‐Pressure Annealing

Cited by 3 publications

References 38 publications

Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN

Dissolution of Mg-enriched defects in implanted GaN and increased p-type dopant activation

Rapid Mg substitution to Ga-sites and slow defect recovery revealed by depth-resolved photoluminescence in Mg/N-ion-implanted GaN

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