Presumption and improvement for gallium oxide thin film of high temperature oxygen sensors

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

“…[36] Ga-doped zinc oxide (ZnO:Ga, GZO) is a wellknown n-type TCO material. [37] Thin films of gallium oxide have been prepared by various methods: (radiofrequency) magnetron sputter deposition, [1][2][3][4]6,7,9,10,12,25,27] electron beam evaporation, [15][16][17]21] pulsed laser deposition, [26,28,30,33,34,36] laser ablation, [31] CVD, [38][39][40][41][42][43][44][45][46][47] ALD, [48][49][50][51][52] molecular beam epitaxy, [32,35] vapor phase epitaxy, [53] spray pyrolysis, [54,55] and sol-gel process. [5,13,23,24] Among these methods, CVD is considered very important because it can readily be employed in industrial processes.…”

Novel Gallium Complexes with Malonic Diester Anions as Molecular Precursors for the MOCVD of Ga2O3 Thin Films

“…[4,5] Recent renewed interest in this compound has arisen since it is a transparent conducting oxide (TCO) and shows promising features for applications in the field of optoelectronics. [6,7] Other uses include the development of gas-sensing devices for both oxygen [8][9][10][11] and reducing gases. [12,13] Furthermore, an insulator-to-metal transition with a relevant conductivity variation has recently been observed in amorphous gallium oxide thin films.…”

Syntheses, X-ray structures and CVD studies of diorganoalkoxogallanes

“…Gallium oxide thin films are attractive materials for use as gas sensors at high temperatures [1][2][3][4]. It has been reported as having a response to oxidizing gases at elevated temperatures (>900°C) [5] and a response to reducing gases at lower temperatures (500°C) [6].…”