Five different homoleptic gallium complexes with malonic diester anions [Ga(ROCOCHOCOR) 3 ] [R = Me (1), Et (2), iPr (3), tBu (4) and SiMe 3 (5)] have been synthesised and characterised by 1 H and 13 C NMR, IR spectroscopy, electron ionisation mass spectrometry (EI-MS), and single-crystal X-ray diffraction. The thermal properties of the obtained compounds were evaluated by thermogravimetric studies to assess their suitability as precursors for the metal-organic chemical vapour deposition (MOCVD) of Ga 2 O 3 thin films. MOCVD of Ga 2 O 3 thin films was carried out starting from compound 2 in light of the promising features of this precur-