Printed Organic Complementary Inverter with Single SAM Process Using a p-type D-A Polymer Semiconductor

Abstract

The demonstration of the complementary integrated circuit using printing processes is indispensable for realizing electronic devices using organic thin film transistors. Although complementary integrated circuits have advantages such as low power consumption and a wide output voltage range, complementary integrated circuits fabricated by the printing method have problems regarding driving voltage and performance. Studies on fabrication processes of electronic circuits for printing technology, including optimization and simplification, are also important research topics. In this study, the fabrication process of the printed complementary integrated circuit was simplified by applying a p-type donor-acceptor (D-A) polymer semiconductor, which is not strongly affected by the electrode work function. An inverter circuit and the ring oscillator circuit were demonstrated using this process. The fabricated ring oscillator array showed excellent performance, with low voltage operation and low performance variation.

Toward Fully Printed Memristive Elements: a-TiO2 Electronic Synapse from Functionalized Nanoparticle Ink

“…In both cases, the printed active layers are left in air, under ambient conditions, for 30 min before annealing on a hot plate at 80 °C for 10 min in air. Finally, the active areas of the devices are encapsulated with Teflon (AF1600X, Dupont, Wilmington, DE), dissolved in Fluorinert (FC-43, 3 M Company, Maplewood, MN) to 1 wt % . The final active area of the first device is ∼150 × 90 μm 2 and of the second ∼150 × 180 μm 2 .…”

“…Finally, the active areas of the devices are encapsulated with Teflon (AF1600X, Dupont, Wilmington, DE), dissolved in Fluorinert (FC-43, 3 M Company, Maplewood, MN) to 1 wt %. 36 The final active area of the first device is ∼150 × 90 μm 2 and of the second ∼150 × 180 μm 2 .…”

Enhancing Doping Efficiency of Diketopyrrolopyrrole-Copolymers by Introducing Sparse Intramolecular Alkyl Chain Spacing

“…The voltage gain was obtained from d V out /d V in of the voltage transfer at V M , where the highest value was 162 at a V DD of 40 V (Figure c). This gain value is among the highest ever reported for all-polymer complementary inverters, thus highlighting the doping compatibility of P1. ,− …”

Self-Assembled Monolayers: Versatile Uses in Electronic Devices from Gate Dielectrics, Dopants, and Biosensing Linkers

“…In the second section, the effects of SAMs acting as dopants on the device's properties are introduced. In the last decade, promising semiconductor materials, including transition metal dichalcogenides (TMDs) [56][57][58][59][60], oxides [61][62][63][64][65], and polymers [66][67][68][69][70], have emerged as next-generation semiconductors. However, the conventional doping techniques (i.e., ion implantation) used in silicon-based fabrications degrade and damage these semiconductors; thus, there is a need for the development of alternative methods to control the electrical properties of the semiconductors.…”