ISLPED '05. Proceedings of the 2005 International Symposium on Low Power Electronics and Design, 2005. 2005
DOI: 10.1109/lpe.2005.195504
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Probabilistic dual-Vth leakage optimization under variability

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Cited by 4 publications
(11 citation statements)
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“…There are many existing literatures [2]- [10][12] on this topic, the basic idea is to find out gates which should be assigned high V th by queuing all the gates in certain order, and then to assign these gates high V th until the queue is empty. In this paper, a dual V th assignment scheme modified on our previous work [12] is used in the reduced DAG after our DAG pruning phase.…”
Section: Dual V Th Assignmentmentioning
confidence: 99%
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“…There are many existing literatures [2]- [10][12] on this topic, the basic idea is to find out gates which should be assigned high V th by queuing all the gates in certain order, and then to assign these gates high V th until the queue is empty. In this paper, a dual V th assignment scheme modified on our previous work [12] is used in the reduced DAG after our DAG pruning phase.…”
Section: Dual V Th Assignmentmentioning
confidence: 99%
“…As technology scaling, process variation can severely affect both power and timing yield. Hence, some researchers devoted themselves to probabilistic dual V th assignment approaches [8]- [10] which statistically optimized the leakage power and circuit performance. However, little work has been done to improve the speed of circuit optimization based on statistical timing analysis.…”
Section: Introductionmentioning
confidence: 99%
“…At the same time, the increase in variability of several key process parameters can significantly affect the design and optimization of low power circuits in the nanometer regime [1][2][3]. Due to the exponential relation of leakage current with some process parameters, such as the effective gate length, oxide thickness and doping concentration, process variations can cause a significant increase in the leakage current.…”
Section: Introductionmentioning
confidence: 99%
“…Due to the exponential relation of leakage current with some process parameters, such as the effective gate length, oxide thickness and doping concentration, process variations can cause a significant increase in the leakage current. To minimize the effect of process variation, some techniques [1][2][3] statistically optimize the leakage power and circuit performance by dual-V th assignment. Leakage current and delay are treated as random variables.…”
Section: Introductionmentioning
confidence: 99%
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