A 35 cm diam inductively coupled rf ion source and its applications for material processing is described. This is the largest commercial rf ion-beam source presently available for ion-beam etching and deposition. It has been used to generate beams of different ions (Ne+, Ar+, Kr+, Xe+, O2+, Cl2+, CH4+,…) at 50–1000 eV of ion energy and corresponding beam currents of 0.15–1.5 A. A presentation of the ion source operation characteristics, along with performance results for various etching and deposition applications are given. Etch uniformities of less than 3% for etch diameters of up to 250 mm are obtained. Etch rates in excess of 100 nm/min for NiFe or silicon dioxide are achievable.