2012
DOI: 10.1103/physrevb.85.195319
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Probing the sensitivity of electron wave interference to disorder-induced scattering in solid-state devices

Abstract: The study of electron motion in semiconductor billiards has elucidated our understanding of quantum interference and quantum chaos. The central assumption is that ionized donors generate only minor perturbations to the electron trajectories, which are determined by scattering from billiard walls. We use magnetoconductance fluctuations as a probe of the quantum interference and show that these fluctuations change radically when the scattering landscape is modified by thermally-induced charge displacement betwee… Show more

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Cited by 9 publications
(27 citation statements)
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“…This brings benefits such as enhanced robustness of the 5/2 fractional quantum Hall state, 8 and improved experimental access to the metallic state generated by electron-electron interactions in 2D systems. 17 Second, the absence of intentional ionized impurities gives electrical properties that are remarkably robust to thermal cycling 18 , in stark contrast to modulation-doped heterostructures 6 . Both features demonstrate there is much more to disorder than the popular metric of mobility alone.…”
mentioning
confidence: 99%
“…This brings benefits such as enhanced robustness of the 5/2 fractional quantum Hall state, 8 and improved experimental access to the metallic state generated by electron-electron interactions in 2D systems. 17 Second, the absence of intentional ionized impurities gives electrical properties that are remarkably robust to thermal cycling 18 , in stark contrast to modulation-doped heterostructures 6 . Both features demonstrate there is much more to disorder than the popular metric of mobility alone.…”
mentioning
confidence: 99%
“…36 If an n-type heterostructure is warmed above ∼ 120 K, the DX centers begin releasing their electrons allowing the doping layer charge distribution to change. 37,50,51 This provides an ideal system for studying whether charge motion in the doping layer generates hysteresis similar to that observed for p-type heterostructures. Gate hysteresis data from Device D at T = 120 and 130 K is shown in Figure 5(a/b).…”
Section: Evidence For the Role Of Dopantsmentioning
confidence: 99%
“…This 'freezing' dopant layer charge is vital to the stability and reproducibility of the electronic properties of devices based on Si-doped n-type AlGaAs/GaAs heterostructures at low temperatures. 37,51,52 Comparatively little is known about the defect physics of Si dopants in (311)-oriented p-type AlGaAs/GaAs heterostructures. In addition to acting as a simple substitutional acceptor by occupying an As site, Si has also been suggested to form an acceptor complex/deep trap known as Si-X.…”
Section: Possible Explanations For This Form Of Hysteresismentioning
confidence: 99%
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“…Ballistic, non-dephasing, electrons are essential for interferometric devices which probe the phase differences along different pathways. [7][8][9] Here, we investigate to what extent the ballistic description reproduces experimental data in multi-terminal devices, where the branching ratio of the thermal energy current is varied by applying a top-gate voltage. 10 In previous quasi-one-dimensional transport studies, thermal conductance in multiples of the theoretical quantum limit 11 κ = k 2 B Ï€ 3 T has been observed.…”
Section: Introductionmentioning
confidence: 99%