Problems of the electron theory of disordered semiconductors

The low-field electron mobility in bulk ZnO has been the object of extensive experimental studies, mainly through measurement of the temperaturedependent Hall effect. In this work, we reassess the experimental results through direct simulations of Hall measurements, performed with a Monte Carlo transport model and taking into account all the major scattering mechanisms. The deformation potentials required to compute acoustic and optical phonon scattering are derived from first-principles computations, and an original theory for charged-dislocation-line scattering is proposed and implemented. Monte Carlo results for the electron mobility and the Hall factor are compared with analytical expressions derived with the relaxation-time approximation, which is found to be adequate at low temperatures where inelastic scattering effects due to optical phonons are negligible.

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“…37,38 The scattering rate and the corresponding momentum relaxation time can be computed, respectively, as:…”

Section: Dislocation Scatteringmentioning

confidence: 99%

Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation

Bertazzi

Bellotti

Furno

et al. 2009

Journal of Elec Materi

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“…The crystals with prevalent homopolar bonds are characterized by short-lived forces of electron-atom interaction. Therefore, local coordination of atoms plays a major role in determining the potential energy of electrons [7]. Evidently, this explains close positions of red luminescence maxima in AgCd 2 GaS 4 and CdS single crystals.…”

Section: Article In Pressmentioning

confidence: 92%

Single-crystal growth and properties of AgCd2GaS4

Olekseyuk

Parasyuk

Yurchenko

et al. 2005

Journal of Crystal Growth

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“…The parameter T0 was evaluated from the slope of the straight lines in Fig.6. In the crystals with 20 and 15 mol% of ZnIn2Se4 T0 values were found to be ~10 7 K and ~2·10 5 K, respectively, which is characteristic of semiconductor compounds [11]. In the crystals with 10 mol% ZnIn2Se4 the parameter T0 drops down to the values irrelevant to the Mott transition.…”

Section: Temperature Dependent Conductivitymentioning

confidence: 96%

“…The preexponential factor σА in Eq. (3) is about 10 -1 -10 -2 Ω -1 •cm -1 , being typical for most disordered semiconductors [ 18 ], including crystals with high defect concentrations [11,18]. In disordered systems, electrons are thermally generated from the localized states close to the Fermi level into the conductivity band [18].…”

Section: Temperature Dependent Conductivitymentioning

confidence: 99%