Process and equipment simulation of dry silicon etching in the absence of ion bombardment

Otto, Thomas; Wolf, H.; Streiter, R.; Dehoff, A.; Wandel, K.; Geßner, Thomas

doi:10.1016/s0167-9317(98)00287-1

Cited by 9 publications

(2 citation statements)

References 12 publications

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“…For precursor screening, a range of etching gases have been evaluated, among them those being widely used for low pressure plasma etching in microelectronics [9,10]. Table 3 summarizes the etching rates achieved under standard conditions (1 l/min (STP) etch gas + 1 l/min (STP) reactive gas).…”

Section: Plasma Chemical Etching Of Silicon Wafersmentioning

confidence: 99%

Atmospheric‐Pressure Plasmas for Solar Cell Manufacturing

Dani

Mäder

Grabau

et al. 2009

Contrib. Plasma Phys.

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Innovative plasma technologies operating at atmospheric pressure are especially advantageous concerning continuous processing capability. They arc characterized by low costs, easy integration in existing production lines, low processing temperatures and high throughput. These economic and technological benefits are especially interesting for the manufacturing of crystalline silicon solar cells. Potential applications include PECVD as well as plasma-chemical etching. In this work two principles of a large area plasma activation are presented: a linearly extended DC arc discharge (LARGE) and a microwave plasma (CYRANNUS). The atmospheric-pressure reactors are designed for the continuous air-to-air processing of flat or slightly curved substrates. Gas purge systems enable the control of the atmosphere in the deposition zone and prevent the leakage of toxic gases. Extensive fluid-dynamic modeling is used for optimization of plasma sources and reactors

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Section: Plasma Chemical Etching Of Silicon Wafersmentioning

confidence: 99%

Atmospheric‐Pressure Plasmas for Solar Cell Manufacturing

Dani

Mäder

Grabau

et al. 2009

Contrib. Plasma Phys.

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“…[3] η μέθοδος των πεπερασμένων όγκων έχει εφαρμοσθεί στην αριθμητική επίλυση διδιάστατων και τριδιάστατων εξισώσεων μεταφοράς (Kleijn et al, 1989;Kleijn et al, 1991 b;Kleijn and Hoogendoom, 199le;Yang et al, 1992;Werner et al, 1992;Evans and Greif, 1994;Kuijlaars et al, 1995;Kleijn et al, 1996;Winters et al, 1997;Popovska et al, 1997;Lee and Sanchez, 1997;Kim and Lee, 1997;Kuhn et al, 1998;Otto et al, 1999;Kommu et al, 2000;Dollet et al, 2002).…”

Section: κατηγορίες αντιδράσεων στη χημική απόθεση απο ατμόunclassified

Σχεδιασμός Αντιδραστήρων Χημικής Απόθεσης Από Ατμό. Εφαρμογή Στη Απόθεση Βολφραμίου Και Στην Απόθεση Οξειδίου Του Κασσιτέρου

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Atmospheric‐Pressure Plasmas for Wide‐Area Thin‐Film Deposition and Etching

Hopfe

Sheel

2007

Plasma Processes & Polymers

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The present paper is focused on coating technologies compatible with industrial requirements, particularly on atmospheric pressure plasma technologies which are compatible with scaling to wide substrate widths (≥0.5 m). The AP‐PECVD reactors are designed for continuous air‐to‐air processing, and can be used for deposition of non‐oxide films. Two thermal methods for atmospheric pressure processing are considered: microwave CVD and DC ArcJet‐CVD. Typical thin film growth rates for PECVD are in the range of 5–100 nm · s−1 (static) and up to 2 nm · m · s−1 (dynamic). The rates for plasma chemical etching are typically 10 times higher. A complimentary lower energy plasma source based on dielectric barrier glow discharge plasma CVD has also been explored. Developments are underway to explore uses for the coating technology, for example scratch resistant coatings on metals, barrier layers, self‐clean functional surfaces and antireflective coatings. Coating materials range from silica, titania, aluminium oxide, metal composite layers, carbon and silicon nitride. Layer properties are close to data known from low pressure PECVD. Plasma chemical etching has been developed for crystalline silicon photovoltaics. The surface textures strongly change with the precursors and the plasma parameters used.magnified image

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Process and equipment simulation of dry silicon etching in the absence of ion bombardment

Cited by 9 publications

References 12 publications

Atmospheric‐Pressure Plasmas for Solar Cell Manufacturing

Atmospheric‐Pressure Plasmas for Solar Cell Manufacturing

Σχεδιασμός Αντιδραστήρων Χημικής Απόθεσης Από Ατμό. Εφαρμογή Στη Απόθεση Βολφραμίου Και Στην Απόθεση Οξειδίου Του Κασσιτέρου

Atmospheric‐Pressure Plasmas for Wide‐Area Thin‐Film Deposition and Etching

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