Process-induced bias: a study of resist design and process implications

Fonseca, Carlos; Scheer, Steven; Carcasi, Michael; Shibata, T.; Otsuka, Takahisa

doi:10.1117/12.773187

Cited by 3 publications

(2 citation statements)

References 4 publications

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“…[5][6][7] Process Improvement Potential -Line In the case of the space for LELE (Figure 14), the best performance would require not only hot plate zone compensation but also improvements in overlay. Overlay performance is based on the best results currently seen by IMEC.…”

Section: Overall Comparison and Potential Improvementmentioning

confidence: 98%

A CDU comparison of double patterning process options using Monte Carlo simulation

et al. 2009

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Determination of the optimal double patterning scheme depends on cost, integration complexity, and performance. This paper will compare the overall CDU performance of litho-etch-litho-etch (LELE) versus a spacer approach. The authors use Monte Carlo simulation as a way to rigorously account for the effect of each contributor to the overall CD variation of the double patterning process. Monte Carlo simulation has been applied to determine CD variations in previous studies 1-2 , but this paper will extend the methodology into double patterning using a calibrated resist model with topography.

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Section: Overall Comparison and Potential Improvementmentioning

confidence: 98%

A CDU comparison of double patterning process options using Monte Carlo simulation

et al. 2009

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“…It was found for a single resist system that significant differences existed in the ability of each strategy to control CD without creating additional through pitch CD error. In another previous study 5 , the impact of resist design was examined to understand how resist design, as well as coater/developer and scanner processing, impact process induced bias (PIB). It was found across a broad resist chemistry space, that differences existed in the ability of each technique to control CD with temperature compensation often inducing less bias.…”

Section: Introductionmentioning

confidence: 99%

Process-induced bias: a study of resist design, device node, illumination conditions, and process implications

Carcasi

Scheer

Fonseca

et al. 2009

Advances in Resist Materials and Processing Technology XXVI

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Critical dimension uniformity (CDU) has both across field and across wafer components. CD error generated by across wafer etching non-uniformity and other process variations can have a significant impact on CDU. To correct these across wafer systematic variations, compensation by exposure dose 1 and/or post exposure bake (PEB) temperature 2,3 have been proposed. These compensation strategies often focus on a specific structure without evaluating how process compensation impacts the CDU of all structures to be printed in a given design.In one previous study 4 limited to a single resist and minimal coater/developer and scanner variations, the authors evaluated the relative merits of across wafer dose and PEB temperature compensation on the process induced CD bias and CDU. For the process studied, it was found that using PEB temperature to control CD across wafer was preferable to using dose compensation. In another previous study 5 , the impact of resist design was explored to understand how resist design, as well as coater/developer and scanner processing, impact process induced bias (PIB). The previous PIB studies were limited to a single illumination case and explore the effect of PIB on only L/S structures.It is the goal of this work to understand additionally how illumination design and mask design, as well as resist design and coater/developer and scanner processing, impact process induced bias (PIB)/OPC integrity.

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Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution

Patsis

Drygiannakis

Constantoudis

et al. 2010

European Polymer Journal

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Process-induced bias: a study of resist design and process implications

Cited by 3 publications

References 4 publications

A CDU comparison of double patterning process options using Monte Carlo simulation

A CDU comparison of double patterning process options using Monte Carlo simulation

Process-induced bias: a study of resist design, device node, illumination conditions, and process implications

Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution

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