Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution

Patsis, G. P.; Drygiannakis, D.; Constantoudis, Vassilios; Raptis, Ioannis; Gogolides, Εvangelos

doi:10.1016/j.eurpolymj.2010.07.002

Cited by 6 publications

(3 citation statements)

References 37 publications

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“…7,8 There are numerous contributors to LWR and LER in EUV patterning ranging from roughness in the lithographic mask, photon shot noise, fluctuations in acid generation and reaction with the quencher molecules due to the random locations of the PAG and quencher. [10][11][12][13] Using a FEM-based model for simulating deformation in rough profiles would require complicated meshing and discretization techniques in order to capture all the irregularities in the geometry. The FEM solver would need to solve a large system of equations due to the large number of higher order mesh elements making the overall simulations extremely slow.…”

Section: Predicting Pattern Collapse Using Machine Learningmentioning

confidence: 99%

Predicting resist pattern collapse in EUVL using machine learning

D'Silva,

Arava,

Erdmann

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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Section: Predicting Pattern Collapse Using Machine Learningmentioning

confidence: 99%

Predicting resist pattern collapse in EUVL using machine learning

D'Silva,

Arava,

Erdmann

et al. 2023

38th European Mask and Lithography Conference (EMLC 2023)

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“…LER affects feature size and device malfunctions so significantly that LER reduction with nanometer accuracy is required [7][8][9]. LER and line-width roughness (LWR) are caused by EUV stochastic events such as shot noise of incident photons, chemical concentration shot noise, and molecule reaction-diffusion in resists [10]. Since numbers of photons in EUVL are 14 times smaller than those of ArF lithography, stochastic EUV photons can result in photon shot noise, which makes poor performance in EUV resist [11,12].…”

Section: Introductionmentioning

confidence: 99%

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Kim

2021

Micromachines

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Although extreme ultraviolet lithography (EUVL) has potential to enable 5-nm half-pitch resolution in semiconductor manufacturing, it faces a number of persistent challenges. Line-edge roughness (LER) is one of critical issues that significantly affect critical dimension (CD) and device performance because LER does not scale along with feature size. For LER creation and impacts, better understanding of EUVL process mechanism and LER impacts on fin-field-effect-transistors (FinFETs) performance is important for the development of new resist materials and transistor structure. In this paper, for causes of LER, a modeling of EUVL processes with 5-nm pattern performance was introduced using Monte Carlo method by describing the stochastic fluctuation of exposure due to photon-shot noise and resist blur. LER impacts on FinFET performance were investigated using a compact device method. Electric potential and drain current with fin-width roughness (FWR) based on LER and line-width roughness (LWR) were fluctuated regularly and quantized as performance degradation of FinFETs.

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“…Kozawa et al [19][20][21][22] have studied acid diffusion behavior and described it with a Gaussian distribution in a continuum or mesoscale level. Mesoscale models incorporating the effects of the component materials of CAR have been developed based on a lattice model including PAG aggregation and the dissolution process [23,24]. However, previous approaches did not include an explicit description of the polymer itself while focusing on stochastic effects.…”

Section: Introductionmentioning

confidence: 99%

Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

et al. 2019

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Extreme ultraviolet lithography (EUVL) is a leading-edge technology for pattern miniaturization and the production of advanced electronic devices. One of the current critical challenges for further scaling down the technology is reducing the line-edge roughness (LER) of the final patterns while simultaneously maintaining high resolution and sensitivity. As the target sizes of features and LER become closer to the polymer size, polymer chain conformations and their distribution should be considered to understand the primary sources of LER. Here, we proposed a new approach of EUV photoresist modeling with an explicit description of polymer chains using a coarse-grained model. Our new simulation model demonstrated that interface variation represented by width and fluctuation at the edge of the pattern could be caused by characteristic changes of the resist material during the lithography processes. We determined the effect of polymer chain conformation on LER formation and how it finally contributed to LER formation with various resist material parameters (e.g., Flory–Huggins parameter, molecular weight, protected site ratio, and Tg).

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Stochastic modeling and simulation of photoresist surface and line-edge roughness evolution

Cited by 6 publications

References 37 publications

Predicting resist pattern collapse in EUVL using machine learning

Predicting resist pattern collapse in EUVL using machine learning

Line-Edge Roughness from Extreme Ultraviolet Lithography to Fin-Field-Effect-Transistor: Computational Study

Molecular Modeling of EUV Photoresist Revealing the Effect of Chain Conformation on Line-Edge Roughness Formation

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