Process optimization and characterization of a novel micro-scaled silver sintering paste as a die-attach material for high temperature high power semiconductor devices

Bajwa, Adeel; Zeiser, R.; Wilde, Jürgen

doi:10.1109/isse.2013.6648214

Cited by 10 publications

(7 citation statements)

References 8 publications

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“…Moreover, electrical properties of the device must not be deteriorated during the assembly process. Table 2: Used process parameters for the sintering and TLP bonding process [2,3].…”

Section: Process Parameters For Die-attachment Methodsmentioning

confidence: 99%

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Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Bajwa

Qin

Wilde

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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In this work, assembly and packaging technologies for high-temperature high-power GaN high electron mobility transistors (HEMTs) are presented. GaN HEMTs with epitaxial growth on Silicon substrates were used during these experiments. Both die-attachment and interconnection techniques were investigated and a performance comparison is given before and after the assembly process. State-of-the-art silver sintering and transient liquid phase bonding were used as die-attachment methods [2], [3]. For the die-attach material, various characterizations such as shear strength, Energy Dispersive X-ray (EDX) spectroscopy and Differential Scanning Calorimetery (DSC) were performed to characterize the operation up to 500 °C. An estimation of the thermal behavior of the sintered and TLP-bonded GaN HEMTs is performed. For interconnection, gold- and palladium-based materials were investigated for wire-bonding. The complete bonding process was characterized. Estimations about the current carrying capabilities are made for both materials. Passive temperature cycling from -40 to +150 °C was performed as an indication of initial reliability for both dieattachments and interconnections. A systematic electrical characterization of HEMTs is performed starting from the on wafer measurements up to the final assembly process. The influence of thermal effects on the electrical properties, such as on-state resistance at higher power levels, i.e., 350 W were studied before and after the assembly process. A combination of sintered device with the gold wire bonds is considered as the optimum packaging of GaN HEMTs

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“…Moreover, electrical properties of the device must not be deteriorated during the assembly process. Table 2: Used process parameters for the sintering and TLP bonding process [2,3].…”

Section: Process Parameters For Die-attachment Methodsmentioning

confidence: 99%

“…An optimum combination of die-bonding process and associated material properties is required to ensure a stable contact. Two die-attachment methods were used in this work, silver sintering [2] and transient liquid phase bonding [3]. …”

Section: Die-attachment Technologiesmentioning

confidence: 99%

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Bajwa

Qin

Wilde

et al. 2014

2014 IEEE 64th Electronic Components and Technology Conference (ECTC)

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“…This method has already been implemented commercially for mounting of power electronic devices [25]. The complete process parameter optimization for Agsintering process along with materials and bonding equipment has been described in earlier work [26]. Table 4 provides the details of used sintering process parameters.…”

Section: Assembly Processmentioning

confidence: 99%

Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

Bajwa

Wilde

2016

Microelectronics Reliability

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“…This exemption, however, is up for periodic review and its continuation is not guaranteed. Sintered nano-Ag has been proposed by a number of researchers as a die attach for high temperature due to the HMP of Ag [6], [7]. However, Navarro et al [8] has recently shown rapid degradation of sintered nano-Ag die attach with thermal cycling between −65°C and 275°C.…”

Section: Introductionmentioning

confidence: 99%

SiC Power Device Die Attach for Extreme Environments

Shen

Johnson

Hamilton

2015

IEEE Trans. Electron Devices

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Silicon carbide power diodes and transistors are enabling technology for power electronics capable of operating in extreme environments. In this paper, a AgBiX solder paste has been studied for SiC power device die attach to power substrates for 200°C use in vehicle and downhole well logging applications. The solder paste has a controlled amount of Sn, which limits the amount of Sn intermetallic formation. This produces a stable solder joint as a function of time at high temperature. The die shear strength remained at ∼38 MPa through 2000 h of storage at 200°C. After 1000 thermal cycles from −55°C to 195°C, the percent die attach area reduction due to solder cracking was <10%.Index Terms-Die attach, extreme environments, power packaging.

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Process optimization and characterization of a novel micro-scaled silver sintering paste as a die-attach material for high temperature high power semiconductor devices

Cited by 10 publications

References 8 publications

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Assembly and packaging technologies for high-temperature and high-power GaN HEMTs

Reliability modeling of Sn–Ag transient liquid phase die-bonds for high-power SiC devices

SiC Power Device Die Attach for Extreme Environments

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