SiC Power Device Die Attach for Extreme Environments

Shen, Zhenxing; Johnson, Richard W.; Hamilton, Michael C.

doi:10.1109/ted.2014.2358206

Cited by 20 publications

(4 citation statements)

References 19 publications

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“…In this case, the capacitance value depends only on the geometry of the capacitor. Therefore, the effect of temperature is not significant [16].…”

Section: 4silicon Carbidementioning

confidence: 95%

Power electronics in extreme environments

Liu¹,

Xu²,

Zhang³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

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Power electronics in harsh environments are required to be used in many areas for measurement, monitoring, and control. These include, for example, the automobile industries, down hole oil and gas exploration, geothermal power industries or even aerospace exploration and space missions. The extreme environment can be divided into high-temperature environments, low-temperature environments, a wide range of temperature environments, an intense radiation environment, or even a combination of all the above extreme conditions. By far, the main leading applications under extreme operating conditions are including silicon (Si), the silicon on the insulator (SOI), silicon germanium (SiGe), silicon carbide (SiC), and gallium nitrite (GaN) semiconductor. Although the development of advanced power electronics designed for harsh environments has successfully pushed the boundaries of extreme conditions, the reliability of passive components in power electronics is still rarely probed. This paper probes the effect of Sic-integrated conductors, for example, on temperature variations for different capacitance at different frequencies up to 300℃, and the experimental results demonstrate their reliability. Research into power electronics in extreme environments is also important in rolling stock, where the reliability of components needs to be taken into account at high altitudes or in extreme low temperatures.

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“…In this case, the capacitance value depends only on the geometry of the capacitor. Therefore, the effect of temperature is not significant [16].…”

Section: 4silicon Carbidementioning

confidence: 95%

Power electronics in extreme environments

Liu¹,

Xu²,

Zhang³

et al. 2023

International Conference on Optoelectronic Information and Functional Materials (OIFM 2023)

View full text Add to dashboard Cite

show abstract

“…It can efficiently conduct the heat generated by switching losses to a radiator in time. Thus, it dramatically improves the capabilities of SiC power modules to operate reliably under the condition of high frequency and high-temperature [36]. Some readily available lead-free alloys fall within the category of the high melting point, with melting points well above 220 °C, which are listed in Table 5.…”

Section: High-temperature Componentsmentioning

confidence: 99%

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

Guo

Xun

et al. 2019

Micromachines

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The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC–DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.

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“…Efforts for seeking a drop-in solution with improved performance have been attempted for more than two decades. The HTLF solder candidates include: AuSn/AuSi/ AuGe [5][6][7][8], ZnAl-based [9,10], BiAg/BiCu/BiAgX [11][12][13][14][15], and SnSb-based solders [3] etc. In addition to a solder alternative, transient-liquid phase soldering (TLPS), sintering, semi-sintering, and Ag-epoxy options have also been attempted for many years [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

A Drop-In High-Temperature Pb-Free Solder Paste That Outperforms High-Pb Pastes in Power Discrete Applications

Zhang,

Richmond,

Aserian

et al. 2023

Journal of Microelectronics and Electronic Packaging

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Sn-based high-temperature Pb-free (HTLF) solder pastes have been developed as a drop-in solution to replace high- Pb solder pastes in power discrete applications. The pastes were designed with Indium Corporation’s DurafuseVR technology, to combine the merits of two constituent powders. A SnSb-based Ag/ Cu-containing high-temperature powder, with a melting temperature above 320 degrees C, was designed to maintain high-temperature performance. A Sn-rich SnAgCu-Sb powder, with a melting temperature around 228 degrees C, was added to the paste to enhance wetting and improve joint ductility. In the design, the final joint will have the low-melting phase (the melting temperature >228 degrees C) in a controllable quantity embedded into the high-melting SnSb matrix. HTLF-1, one of the designs, maintained the bond shear strength up to 15 MPa, even around 290 degrees C. Another design, HTLF-2, has a similar bond shear strength as Pb92.5/Sn5/Ag2.5 around 290 degrees C, but exceeds substantially below 250 degrees C. The power discrete components had been built with both HTLF solder pastes for both die-attach and clip-bond through the traditional high-Pb process, which demonstrated the drop-in processing compatibility. The components survived three additional surface mounting (SMT) reflows (peak temperature upto 260 degrees C) and passed moisture sensitivity level 1 (MSL1). This confirmed that the maintained joint strength (comparable to or stronger than high-Pb), helped to keep the joint integrity within the encapsulated components in the following SMT process, even with the controlled quantity of the melting phases above 228 degrees C. Both HTLF solder pastes outperformed Pb92.5/Sn5/Ag2.5 in the resistance from drain to source when power is on (RDS(on)), even after 1,000 cycles of temperature cycling test (TCT) under 255/175 degrees C, which is attributed to the intrinsic lower electrical resistivity of Sn in both HTLF pastes. Microstructural observation had shown no corner cracks for both die-attach and clip-bond joints after TCT.

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SiC Power Device Die Attach for Extreme Environments

Cited by 20 publications

References 19 publications

Power electronics in extreme environments

Power electronics in extreme environments

Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

A Drop-In High-Temperature Pb-Free Solder Paste That Outperforms High-Pb Pastes in Power Discrete Applications

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