1998
DOI: 10.1116/1.590175
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Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study

Abstract: Articles you may be interested inHopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs(001) Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) Appl. Phys. Lett. 88, 161903 (2006); 10.1063/1.2189915Planar InAs growth on GaAs(001) and subsequent quantum dot formation by a surface induced morphological instability J.Reflectance anisotropy spectroscopy ͑RAS͒ has been used to monitor the formation and development of InAs islands grown onto … Show more

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Cited by 23 publications
(7 citation statements)
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“…Furthermore, at the deposition temperature used in these experiments, T s = 450°C (T s /T m J 0.2), the sticking probability of the metallic species arriving at the growth front is essentially unity. Finally, at the gas phase pressure used in these experiments, 20 mTorr, the thermalization distances of sputtered Al and Hf atoms and Ar + ions neutralized and reflected from the target is <20 mm [26], while the target to substrate separation is 60 mm. The primary energetic species incident at the growing film are Ar + with energies E i = eV s , where V s = (V plasma À V a ), in which V plasma is the plasma potential and V a is the applied substrate potential.…”
Section: Discussionmentioning
confidence: 99%
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“…Furthermore, at the deposition temperature used in these experiments, T s = 450°C (T s /T m J 0.2), the sticking probability of the metallic species arriving at the growth front is essentially unity. Finally, at the gas phase pressure used in these experiments, 20 mTorr, the thermalization distances of sputtered Al and Hf atoms and Ar + ions neutralized and reflected from the target is <20 mm [26], while the target to substrate separation is 60 mm. The primary energetic species incident at the growing film are Ar + with energies E i = eV s , where V s = (V plasma À V a ), in which V plasma is the plasma potential and V a is the applied substrate potential.…”
Section: Discussionmentioning
confidence: 99%
“…Film growth is carried out in magnetically unbalanced mode [25] at a constant power of 100 W and total pressure of 20 mTorr (2.67 Pa) in 5% N 2 /Ar mixed atmospheres (99.999% and 99.9999% pure N 2 and Ar, respectively) with a target to substrate distance of 6 cm, resulting in an alloy deposition rate of 0.53 nm s À1 on grounded substrates. The relatively high pressure is used to thermalize sputtered atoms and the majority of ions neutralized and reflected from the target [26]. Thus, the primary energetic particles incident at the growing film are ions attracted by the substrate bias.…”
Section: Methodsmentioning
confidence: 99%
“…10, while RAS has been applied to monitor the MBE growth process 8,9 as well as the development of QD on GaAs͑001͒ substrates. 11 Very recently, a new RAS study has been published about the oxidation at low temperature of clean InAs͑001͒ surfaces. 13 It is well known that tem-perature has a strong effect on optical spectra, modifying line shapes and energy positions of the spectral features.…”
mentioning
confidence: 99%
“…This 2D to 3D transition happens in the S-K growth because of the balance between the surface energy and the elastic relaxation energy. We also know that the initially formed 2D layer decomposes partially in the process of forming the 3D islands and an equilibrium wetting layer thickness is achieved [48,53,[62][63][64][65]. We have found this equilibrium thickness is 2 ML by comparing the growth rates in Large 3D Islands stage and steady InAs QDs stage.…”
Section: Discussionmentioning
confidence: 85%