Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt-quenching process followed by heat treatment, which exhibit good thermal, chemical, and mechanical stabilities, and are amenable to fiberdrawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070-1330 nm) band with large full-width at half-maximum (FWHM) values (189-266 nm) and notable Stokes shift (100-210 nm) was observed, which depended on the B 2 O 3 concentration. The PL lifetime was about 1.42-2.44 ls, and it showed a clear decrease with increasing the QDs size. The planar [BO 3 ] triangle units forming the two-dimensional (2D) glass network structure clearly increased with increasing B 2 O 3 concentration, which could accelerate the movement of Pb 2+ and Se 2À ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD-doped borosilicate glass may find potential application in ultra-wideband fiber amplifiers. K E Y W O R D S crystallization, glass topological structure, optical properties, PbSe quantum dots, photoluminescence lifetime How to cite this article: Xu Z, Liu X, Jiang C, et al. Effect of topological structure on photoluminescence of PbSe quantum dot-doped borosilicate glasses.