Productivity function for multireactional CVT and its application to iodine transport of cadmium sulphide

Attolini, G.; Paorici, C.; Zecchina, L.

doi:10.1016/s0022-0248(08)80016-4

Cited by 5 publications

(6 citation statements)

References 7 publications

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“…Also from that Ref. [76], the standard binary values of CdI 2 in S 2 , I 2, I, and in Ar are taken to calculate the other ones using Graham's law [41] …”

Section: Diffusion Coefficientmentioning

confidence: 99%

“…Upon opening the ampoule in that case, the total pressure at room temperature appeared to be higher than one bar by reason of unknown vapor. If the experimental rate is clearly lower than the calculated one, as in experiments 10 and 11, also foreign gases could be the reason [52,71,76,[82][83][84], increasing the total vapor pressure and decreasing the transport rate. In addition, a foreign vapor can also affect the chemical equilibrium.…”

Section: Comparison Between Theory and Experimentsmentioning

confidence: 99%

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Chemical vapor transport of zinc sulfide

Lauck

2010

Journal of Crystal Growth

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“…Also from that Ref. [76], the standard binary values of CdI 2 in S 2 , I 2, I, and in Ar are taken to calculate the other ones using Graham's law [41] …”

Section: Diffusion Coefficientmentioning

confidence: 99%

Section: Comparison Between Theory and Experimentsmentioning

confidence: 99%

Chemical vapor transport of zinc sulfide

Lauck

2010

Journal of Crystal Growth

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“…In the closed system, the transport of the gaseous species through a chemical reaction it is assured by the driving force given by the expression [23,29,30]:…”

Section: Theoretical Modelmentioning

confidence: 99%

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I₂

Stănculescu

2010

Cryst. Res. Technol.

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We have studied the growth of ZnSe crystals by chemical transport in a closed system in nonstoichiometric conditions, and we have deduced that the interface kinetics is the phenomenon limiting the growth process. The effect on the growth process of the deviation from stoichiometry of the II-VI compound was investigated using a mathematical model that involves indirect data computed from directly obtained experimental values. The experimental crystallization rate was compared with the maximum value of the transport flux calculated using the Arizumi-Nishinaga model. The influence of the stoichiometry of the source material and of the variations in the growth parameters (supercooling, geometrical dimension, specific loading of the ampoule and iodine concentration) on the ZnSe crystal growth process has also been studied. IntroductionThe growth of the bulk wide gap II-VI semiconductor compounds, such as zinc selenide (ZnSe) for optical and opto-electronic applications, rises problems because they have high melting points and they decompose in volatile components below this temperature. Alternative methods for the crystals growth are the growth from the vapour phase by physical transport [1][2][3] or chemical transport in a closed system using different transport agents (iodine [4][5][6][7][8][9][10][11][12][13][14], NH 4 Cl [15], Zn(NH 4 ) 3 Cl 5 [16][17][18]). In the last system the growth rate is controlled either by the interface kinetical processes or by the mass transport in the vapour phase [19]. The first thermodynamic analysis of the chemical transport reaction in closed tube system has been done by Schäfer [20][21][22] who explained the transport of the solid material considering only the diffusion and laminar flows and neglecting all the other influences on the transport in the vapour phase. Lever [23] has developed a model for the transport of the solid between two regions situated at different temperatures and he has deduced a transport function for an one-dimensional, steady-state diffusion limited process, in a single heterogeneous equilibrium system. Arizumi-Nishinaga [24][25][26] has introduced another transport function taking into account equilibrium considerations, Fick's diffusion law and Schäfer expression for the transport rate.The method to grow single crystals from the vapour phase by chemical transport was firstly presented by Nitsche [27] and further developed by Kaldis [28]. Lately the interest for this growth method has increased and computational studies of different systems such as ZnSe+I 2 have been developed [12][13][14].This paper presents some results about the influence of the stoichiometry of the starting material on the crystallization process. To investigate the effect of the deviation from stoichiometry and thermal regime on the growth process of ZnSe crystals by iodine transport, we have considered two different successive phenomena: the transport of the species present in the gaseous phase (transport kinetics) and the incorporation of the gaseous species at the crystal-vapou...

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“…When more than one chemical transport reaction is involved, the mass transfer direction will be established by the sign of DH associated to the dominant reaction (see, e.g., the CdS/iodine system [66]). …”

Section: Cvt Growth Techniquesmentioning

confidence: 99%

“…A more general treatment for predicting the maximum efficiency in a multireactional CVT process goes through a generalization of Klosse's productivity function. It was shown [66,123] that an explicit and more general expression of F can be given in terms of only thermodynamic quantities by making use of an approach which is based on the MandeleLever theory of diffusive CVT [87e89]. One gets: represents the contribution of the r-th chemical reaction to F, as discussed for the CdS/I 2 CT-CVT case [124].…”

Section: The Productivity Functionmentioning

confidence: 99%

Vapour growth of bulk crystals by PVT and CVT

Paorici

Attolini

2004

Progress in Crystal Growth and Characterization of Materials

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Productivity function for multireactional CVT and its application to iodine transport of cadmium sulphide

Cited by 5 publications

References 7 publications

Chemical vapor transport of zinc sulfide

Chemical vapor transport of zinc sulfide

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I₂

Vapour growth of bulk crystals by PVT and CVT

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Productivity function for multireactional CVT and its application to iodine transport of cadmium sulphide

Cited by 5 publications

References 7 publications

Chemical vapor transport of zinc sulfide

Chemical vapor transport of zinc sulfide

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I2

Vapour growth of bulk crystals by PVT and CVT

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Product

Resources

About

Kinetical study of the nonstoichiometric vapour growth process in the system ZnSe:I₂