Profiling of the SiO₂ - SiC Interface Using X-ray Photoelectron Spectroscopy

Abstract

The implementation of SiC based sensors and electronics for operation in chemically harsh, high temperature environments depends on understanding the SiO 2 /SiC interface in field effect devices. We have developed a technique to fabricate wedge polished samples (angle 1 x10 -4 rad) that provides access to the SiO 2 /SiC interface via a surface sensitive probe such as xray photoelectron spectroscopy (XPS). Lateral scanning along the wedge is equivalent to depth profiling. Spatially resolved XPS images of the O 1s and Si 2p core levels were obtained of the interfacial region. Samples consist of device-quality thermally grown oxides on 4H-SiC single crystal substrates. The C 1s spectrum suggests the presence of a graphitic layer on the nominally bare SiC surface following thermal oxidation.

Carbon Microfibers Sheathed with Aligned Carbon Nanotubes: Towards Multidimensional, Multicomponent, and Multifunctional Nanomaterials

“…The salient feature for the corresponding XPS survey spectrum of the SiCl 4 ‐treated CFs is the appearance of Si 2p (103.5 eV, see the inset) and Si 2s (154.5 eV) peaks, together with a concomitant increase (decrease) in the O 1s (C 1s) peaks. While the peak at 103.5 eV represents the characteristic Si 2p signal from SiO 2 ,17–19 no other Si 2p peaks associated with the silicon (99.5 eV),17 SiO (101.7 eV),17 or SiC (101 eV)18, 20 were observed. The observed C signal in the XPS survey spectrum of the SiO 2 ‐coated CFs arises from the CF substrate, indicating that the SiO 2 layer is non‐pinhole‐free and/or thinner than the XPS probe depth (<10 nm) 21.…”

Energy-band alignment of HfO2∕SiO2∕SiC gate dielectric stack

“…It is known that the binding energy difference between the stoichiometric SiO 2 and SiC is about 3.5 eV. 12 However, in Fig. 2͑b͒, the high energy peak is gradually shifted toward the SiC substrate peak across the interfacial layer.…”

Structural and magnetic properties of pulsed laser deposited Fe–SiC thin films

“…However, in the same annealed sample, the Si 2p peak at 103.4 eV (Fig. 3c) corresponds to the binding energy of SiO 2 [23]. Fig.…”