Progress in amorphous silicon based multijunction modules

Arya, R.R.; Oswald, R.; Li, Y.M.; Maley, N.; Jansen, K.; Yang, Lei; Chen, L.F.; Willing, F.; Bennett, M.; Morris, J.; Carlson, David

doi:10.1109/wcpec.1994.519982

Cited by 8 publications

(3 citation statements)

References 2 publications

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“…The AZO has several advantages such as good electrical conductivity, plasma robustness, light-scattering properties [ 1 - 3 ], etc. One drawback of AZO is that when it is used in amorphous silicon [a-Si] solar cells, having a-SiC:H or a-Si:H window layer, the FF deteriorates [ 4 - 7 ]. It is assumed that the work function of AZO is lower than that of FTO [ 8 ], causing an increased barrier potential to occur at the front interface obstructing the carrier movements and thus, lowering the FF.…”

Section: Introductionmentioning

confidence: 99%

Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

Baek

Lee

et al. 2012

Nanoscale Res Lett

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Aluminum-doped zinc oxide (ZnO:Al) [AZO] is a good candidate to be used as a transparent conducting oxide [TCO]. For solar cells having a hydrogenated amorphous silicon carbide [a-SiC:H] or hydrogenated amorphous silicon [a-Si:H] window layer, the use of the AZO as TCO results in a deterioration of fill factor [FF], so fluorine-doped tin oxide (Sn02:F) [FTO] is usually preferred as a TCO. In this study, interface engineering is carried out at the AZO and p-type a-SiC:H interface to obtain a better solar cell performance without loss in the FF. The abrupt potential barrier at the interface of AZO and p-type a-SiC:H is made gradual by inserting a buffer layer. A few-nanometer-thick nanocrystalline silicon buffer layer between the AZO and a-SiC:H enhances the FF from 67% to 73% and the efficiency from 7.30% to 8.18%. Further improvements in the solar cell performance are expected through optimization of cell structures and doping levels.

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Section: Introductionmentioning

confidence: 99%

Interface modification effect between p-type a-SiC:H and ZnO:Al in p-i-n amorphous silicon solar cells

Baek

Lee

et al. 2012

Nanoscale Res Lett

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“…2 Scientists at Solarex started developing a-Si multijunction solar cell technology in the mid-1980s and by 1995 had demonstrated stabilized conversion efficiencies in the 8-9% range for 4 ft 2 ($0Á36 m 2 ) monolithic modules. 3 These modules were fabricated with a double-junction or tandem structure where the front p-i-n junction contained an intrinsic layer of $200 nm of undoped a-Si and the back p-i-n junction contained $200 nm of an amorphous silicon germanium alloy (a-SiGe). In 1997, Solarex, now as part of Amoco/Enron Solar, started manufacturing 8Á6 ft 2 ($0Á77 m 2 ) a-Si/a-SiGe tandem modules at the TF1 plant in Toano, Virginia.…”

Section: Introductionmentioning

confidence: 99%

Amorphous silicon PV module manufacturing at BP solar

Arya¹,

Carlson²

2002

Progress in Photovoltaics

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BP Solar started manufacturing small-area, single-junction amorphous silicon solar cells for consumer applications in 1984, began producing 1 ft 2 ($0Á09 m 2 ) singlejunction modules for terrestrial applications in 1986 and initiated the production of 8Á6 ft 2 ($0Á77 m 2 ) tandem modules for both remote and building-integrated applications in 1997. Over the last few years, the technical and manufacturing personnel at the BP Solar TF1 plant in Toano, Virginia have made tremendous progress in ramping up the plant to where it is now producing amorphous silicon tandem modules with electrical yields in excess of 95% and at a run rate of more than 7 MW p per year.

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“…15OoC) due to the interdifbion of aluminum and silicon at the rear contacts. More recently, Solarex has developed a-Si:H solar cells that utilize textured tin oxide as a fiont contact and zinc oxide/aluminum as a rear contact [6].…”

Section: Introductionmentioning

confidence: 99%