Progress in silicon-based quantum computing

Clark, Robert G.; Brenner, R.; Buehler, T. M.; Chan, Victor; Curson, Neil J.; Dzurak, A. S.; Gauja, E.; Goan, Hsi‐Sheng; Greentree, Andrew D.; Hallam, Toby; Hamilton, A. R.; Hollenberg, Lloyd C. L.; Jamieson, David N.; McCallum, Jeffrey C.; Milburn, G. J.; O'Brien, Jeremy L.; Oberbeck, L.; Pakes, C. I.; Prawer, S.; Reilly, David; Rueß, Frank J.; Schofield, Steven R.; Simmons, M. Y.; Stanley, F. E.; Starrett, R.P.; Wellard, Cameron; Yang, C. H.

doi:10.1098/rsta.2003.1221

Cited by 62 publications

(29 citation statements)

References 45 publications

(65 reference statements)

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“…The thickness of the Al evaporation was ~30 nm. In-depth discussion on DQD device fabrication can be found in [8] and [18].…”

Section: Device Architecture and Fabricationmentioning

confidence: 99%

“…QC architectures based on P donors in Si (Si:P) are also being actively pursued due to their compatibility with conventional Si metal-oxide semiconductor (MOS) fabrication technology [8] [9]. In broad terms there are three main schemes for realizing donor based QC's, namely where the qubits are defined by nuclear spin [10], electron spin [11] [12] and electron charge [13].…”

Section: Introductionmentioning

confidence: 99%

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Modelling single electron transfer in Si:P double quantum dots

et al. 2004

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Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behavior and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime.

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“…The thickness of the Al evaporation was ~30 nm. In-depth discussion on DQD device fabrication can be found in [8] and [18].…”

Section: Device Architecture and Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modelling single electron transfer in Si:P double quantum dots

et al. 2004

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“…The use of buried donors in a semiconductor matrix has been discussed for charge-based quantum computing 10,14,15 . While the advantages of semiconductor fabrication and gate control are well known, the fast dephasing and relaxation effects mean that charge-based quantum computing using buried donors is still technically difficult.…”

Section: Buried Donors and The Hydrogenic Approximationmentioning

confidence: 99%

“…Numerical estimates are given for the case of phosphorous donors in silicon but the concepts are generally applicable to other dopants. This is of particular interest given the recent advances in single dopant placement and cluster based charge transfer experiments using phosphorous in silicon 15 . Conventional QDCA rely on incoherent evolution (governed by the T 1 relaxation time) to mediate transitions between the logical states.…”

mentioning

confidence: 99%

Quantum-dot cellular automata using buried dopants

et al. 2005

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The use of buried dopants to construct quantum-dot cellular automata is investigated as an alternative to conventional electronic devices for information transport and elementary computation. This provides a limit in terms of miniaturisation for this type of system as each potential well is formed by a single dopant atom. As an example, phosphorous donors in silicon are found to have good energy level separation with incoherent switching times of the order of microseconds. However, we also illustrate the possibility of ultra-fast quantum coherent switching via adiabatic evolution. The switching speeds are numerically calculated and found to be 10's of picoseconds or less for a single cell. The effect of decoherence is also simulated in the form of a dephasing process and limits are estimated for operation with finite dephasing. The advantages and limitations of this scheme over the more conventional quantum-dot based scheme are discussed. The use of a buried donor cellular automata system is also discussed as an architecture for testing several aspects of buried donor based quantum computing schemes.

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“…Furthermore, schemes compatible with present semiconductor technologies [3][4][5][6] are especially attractive because of their potential to leverage the associated industrial experience [7,8].…”

Section: Introductionmentioning

confidence: 99%

Controlled phase gate for solid-state charge-qubit architectures

Schirmer

Greentree

2005

Phys. Rev. A

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We describe a mechanism for realizing a controlled phase gate for solid-state charge qubits. By augmenting the positionally defined qubit with an auxiliary state, and changing the charge distribution in the three-dot system, we are able to effectively switch the Coulombic interaction, effecting an entangling gate. We consider two architectures, and numerically investigate their robustness to gate noise.

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Progress in silicon-based quantum computing

Cited by 62 publications

References 45 publications

Modelling single electron transfer in Si:P double quantum dots

Modelling single electron transfer in Si:P double quantum dots

Quantum-dot cellular automata using buried dopants

Controlled phase gate for solid-state charge-qubit architectures

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