Progress in the development of industrial nPERT cells

Buchholz, Florian; Preis, P.; Chu, Haifeng; Lossen, J.; Wefringhaus, E.

doi:10.1016/j.egypro.2017.09.276

Cited by 9 publications

(10 citation statements)

References 7 publications

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“…In the first batch, a maximum efficiency of 20.6% (independently confirmed by CalTec) was measured using two anneals to separately activate boron and phosphorus dopants with an annealing temperature below 1050°C for the boron activation. The high performance of the boron emitter annealed at 1000°C is supported by the high open‐circuit voltage (V oc ) value of 660 mV and the efficiency of 20.6% close to the current n‐PERT performances found in pilot lines . As the efficiency is mainly limited on these cells by the short‐circuit current density (J sc ), work on the metallization grid was performed to increase this parameter with batch 2.…”

Section: Resultsmentioning

confidence: 99%

“…As-implanted boron and phosphorus concentration profiles measured by secondary-ion mass spectroscopy (SIMS). Gaussian profile of beamline ion implantation (BLII) implant of B + ions at 10 keV and 1.2 × 10 15 at/cm 2 (BLII_asImp) compared with plasmaimmersion ion implantation (PIII) implants from B 2 H 6 and PH 3 gas precursors with two different implantation energies in the PH 3 can change the complexes dissociation, an identical machine dose can correspond to different boron doses. In this study, two different plasma conditions were used.…”

Section: Figurementioning

confidence: 99%

“…SiO 2 thickness is represented with the hatched area. The SIMS measurement of the PIII_asImp sample was added in B, for comparison along with the boron solubility limit at 950°C as a dot line at 9 × 10 19 /cm 3 used while deactivating the "SRH-at-surface" and "SRH-in-emitter" module. Simulation results are shown in Table 3.…”

Section: Impact Of the Implantation Dose On The Piii Boron Emittersmentioning

confidence: 99%

“…Nowadays, high‐temperature gaseous diffusion from BBr 3 or BCl 3 precursors is the main technique used for boron doping. High photovoltaic (PV) conversion efficiencies can be reached by this way with recently 20.8% obtained on a pilot line of screen‐printed n‐type PERT (n‐PERT) solar cells . However, a keen interest toward single‐side doping techniques has been seen these past few years .…”

Section: Introductionmentioning

confidence: 99%

“…High photovoltaic (PV) conversion efficiencies can be reached by this way with recently 20.8% obtained on a pilot line of screen-printed n-type PERT (n-PERT) solar cells. 3 However, a keen interest toward singleside doping techniques has been seen these past few years. 4 Compared with the double-side doping of the BBr 3 and BCl 3 diffusions, they can strongly simplify the solar cells process flows and thus reduce the production cost of solar cells with boron-doped layers.…”

Section: Introductionmentioning

confidence: 99%

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Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Lanterne

Desrues

Lorfeuvre

et al. 2019

Progress in Photovoltaics

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Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next‐generation solar cells based on crystalline silicon (c‐Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high‐emitter quality. In this work, we propose the use of plasma‐immersion ion implantation (PIII) from B2H6 gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J0e) below 21 fA/cm2 were obtained using the PIII technique regardless of the tested implantation doses for sheet resistances between 110 and 160 Ω/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen‐printing/firing. The PIII boron emitters' performances were further tested with their integration in n‐type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost.

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Section: Resultsmentioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Impact Of the Implantation Dose On The Piii Boron Emittersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Lanterne

Desrues

Lorfeuvre

et al. 2019

Progress in Photovoltaics

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Wet Chemical Cleaning for Industrial Application

Buchholz

Wefringhaus

Plettig

2021

Photovoltaic Manufacturing

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Past, Present, and Future Outlook for Edge Isolation Processes in Highly Efficient Silicon Solar Cell Manufacturing

et al. 2022

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This work highlights present research and mass production results of wet‐chemical solutions for industrial edge isolation of silicon solar cells, aiming for a reduction of nitric acid consumption and production costs as well as a simultaneous increase in efficiency. All processes are applied to either industrially passivated emitter and rear contact (PERC) or tunnel oxide‐passivated contact (TOPCon) solar cells. Herein, a review of different edge isolation techniques in the history of silicon solar cell processing is presented. Subsequently, novel wet‐chemical approaches are focused on, namely 1) HNO3‐reduced edge isolation (InOxSide Fusion), 2) HNO3‐free edge isolation (InOxSide Blue), and 3) batch cluster solution—a combination of an acidic inline and an alkaline batch tool for emitter edge isolation of PERC and TOPCon solar cells. For each of the approaches, cell results and total cost of ownership estimations are presented. Based on all findings, a comprehensive discussion between inline versus batch‐cluster processing is presented. All investigations are performed on industrial equipment, wafer sizes, and a solar cell efficiency level of above 23%.

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Progress in the development of industrial nPERT cells

Cited by 9 publications

References 7 publications

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Wet Chemical Cleaning for Industrial Application

Past, Present, and Future Outlook for Edge Isolation Processes in Highly Efficient Silicon Solar Cell Manufacturing

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