Progress on design and demonstration of the 4MB chalcogenide-based random access memory

Ramaswamy, S.; Li, Bin; Bumgarner, A.; Rodgers, J.; Burcin, L.; Hunt, K.; Maimon, J.

doi:10.1109/nvmt.2004.1380830

Cited by 9 publications

(8 citation statements)

References 20 publications

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“…Several technologies have been used: Charge Trap (SONOS in particular [14]- [16]) and, more recently, magnetic RAM [17], phase change [18]- [20], and ferroelectric memories [21]- [23] are being shipped or are under development. These devices are typically resistant up to 1 Mrad, thanks to robust cells (either intrinsically or because of the large feature size) and rad-hard peripheral circuitry.…”

Section: E Mainstream and Rad-hard Devicesmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

139

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We discuss non-volatile memories (NVM) for space applications. The focus will be both on technologies and devices aimed at the mainstream commercial markets and on rad-hard devices. Commercial NVMs are very attractive for space designers due to their large size (tens of Gbits), even though they have several issues related to ionizing radiation. Rad-hard NVMs offer radiation hardness, but are available only in small size (few Mbits). Most of the emphasis in this review paper will be on the current dominant technology in the mainstream market: floating gate flash memories. A comprehensive discussion of total dose and single event effects results for a wide cross section of NVMs will be presented. Finally, we will conclude with a cursory glance at other emerging non-volatile technologies.Index Terms-Ferroelectric devices, flash memory, magnetoresistive devices, nonvolatile memory, phase change memory, radiation effects. I. OVERVIEWN ON-VOLATILE memories (NVMs) are used in a variety of space applications, as data or code memories, and are increasingly needed for future missions. This paper will discuss the technologies and devices available for non-volatile storage in the mainstream and in the rad-hard market, with a strong attention to the radiation sensitivity, which is of primary importance for harsh environments such as space.The work is organized as follows: we will first introduce the basic definitions and metrics concerning NVMs, then explore and compare the major storage concepts. In particular, charge-based, phase-change, ferroelectric, and magnetoresistive memories will be presented, with emphasis on density, performance, reliability, and radiation sensitivity. Architectural information concerning the array organization and peripheral circuitry will be given, highlighting known radiation issues and critical building blocks. A. Key Definitions and MetricsA non-volatile memory is a memory that retains information when powered off. Different terms are used to indicate the act of storing a digital value in a non-volatile memory bit, depending on the memory type and architecture. In charge-based storage, the terms program and erase are used to indicate the injection of Manuscript negative charge into and its removal from (or injection of positive charge into) the charge storage element, respectively. In the context of phase change memories, the terms set and reset are used to indicate the operations leading to the crystallization and amorphization of the phase-change material. For other memories, such as ferroelectric or magnetic, the term write is simply used, as for SRAMs and DRAMs. The association of these operations and terms with the stored digital value ("0" or "1") is arbitrary. In the following we will stick to the conventions most commonly used for each memory type.In addition to familiar parameters such as speed, power consumption, and density, two additional metrics are of main importance for non-volatile memories: retention and endurance. This is because wear-out is usually much stronger in non-volat...

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Section: E Mainstream and Rad-hard Devicesmentioning

confidence: 99%

Present and Future Non-Volatile Memories for Space

Gerardin

Paccagnella

2010

IEEE Trans. Nucl. Sci.

139

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“…The chalcogenide-based C-RAM memory stores information through changing the phase of the chalcogenide material which acts as the nonvolatile memory element between the amorphous and crystalline states to represent the "0" or "1" states respectively with the application of a current [5]. Limiting the amount of chalcogenide material is critical to minimizing the current required to cause a state transition.…”

Section: Memory Coresmentioning

confidence: 99%

The RAD6000MC System-on-Chip Microcontroller for Spacecraft Avionics and Instrument Control

Berger

Burcin

Hutcheson

et al. 2008

2008 IEEE Aerospace Conference

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“…In both of these cases, as with the MRAM developments, the chips have been developed for commercial applications. For space applications, BAE Systems has completed the design of a 4Mb radiation hardened C-RAM TM chip in radiation hardened 0.25um technology and it is currently in manufacturing [13]. The 132mm 2 chip is predicted to have a 70ns read access time.…”

Section: Enabling Computing Technologiesmentioning

confidence: 99%

Applying Reconfigurable Processing Technologies to Spaceborne Applications

Marshall

Berger

2005

2005 IEEE Aerospace Conference

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Reconfigurability 12 is a key element to extracting the most from any spacecraft or spacecraft subsystem. It allows systems to become more autonomous, maximizes their usage once deployed and delays obsolescence by allowing new uses of the spaceborne asset, often in ways not envisioned by its creators. This paper briefly explores the needs for reconfigurable systems and then presents a four dimension taxonomy to describe their make-up and potential growth areas.It describes recent advances in non-volatile memory, reconfigurable technologies and processors including BAE Systems' chalcogenide, which is the base of an upcoming 4 megabit C-RAM TM device, and after that various C-RAM embedded devices. The BAE Systems reconfigurable architecture is reviewed and potential near term products described. Finally, the types of, and challenges using new technologies in reconfigurable systems are described. This includes discussing the need to standardize the interfaces in order to allow a growth similar to what has occurred in spacecraft processors.

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Progress on design and demonstration of the 4MB chalcogenide-based random access memory

Cited by 9 publications

References 20 publications

Present and Future Non-Volatile Memories for Space

Present and Future Non-Volatile Memories for Space

The RAD6000MC System-on-Chip Microcontroller for Spacecraft Avionics and Instrument Control

Applying Reconfigurable Processing Technologies to Spaceborne Applications

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