Progress toward traceable nanoscale optical critical dimension metrology for semiconductors

Patrick, Heather J.; Germer, Thomas A.

doi:10.1117/12.734080

Cited by 12 publications

(10 citation statements)

References 15 publications

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“…figure 3. These input parameters are typically known only with a specific uncertainty, and the influence of all input parameters, the error propagations, have to be investigated theoretically and (if possible) ideally also experimentally [6,18,21]. Additionally the impact of the approximations and idealised assumptions already mentioned in section 2.2 has to be evaluated and taken into account.…”

Section: High Resolution Afm and Sem Methods For Support And Comparisonmentioning

confidence: 99%

“…These systematic deviations may be connected both to the applied measurement methods and tools, to necessary approximations in the modelling and data analysis and to imperfections and limitations of the target structures. Although these systematic offsets may also be at least partly attributed to the CD-SEM measurements or simply to inconsistencies in the definition of the measurands, for the implementation of scatterometry as absolute metrology suitable also for quality control applications it is necessary to identify, characterise and eliminate possible causes for systematic measurement errors and to evaluate thoroughly a complete measurement uncertainty estimation to achieve reliable scatterometric measurement results which ideally are traceable to the SI unit Meter [5,6].…”

Section: Introductionmentioning

confidence: 99%

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First steps towards a scatterometry reference standard

Bodermann

Hansen²,

Burger³

et al. 2012

SPIE Proceedings

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Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has recently started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology and to establish scatterometry as a traceable and absolute metrological method for dimensional measurements. This requires a thorough investigation of the influence of all significant sample, tool and data analysis parameters, which affect the scatterometric measurement results. For this purpose and to improve the tool matching between scatterometers, CD-SEMs and CD-AFMs, experimental and modelling methods will be enhanced. The different scatterometry methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. To transfer traceability to industrial applications of scatterometry an important step and one final goal of this project is the realisation of different waferbased reference standard materials for calibration of scatterometers. The approaches to reach these goals and first design considerations and preliminary specification of the scatterometry standards are presented and discussed.

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Section: High Resolution Afm and Sem Methods For Support And Comparisonmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

First steps towards a scatterometry reference standard

Bodermann

Hansen²,

Burger³

et al. 2012

SPIE Proceedings

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“…One main goal is to establish scatterometry as traceable and absolute metrological method for dimensional measurements of micro-and nanostructures on surfaces [4,5]. Recent investigations [6] have shown, that even small feature details like line edge roughness (LER) or line widths roughness (LWR) do significantly affect the analysis of scatterometric measurements.…”

Section: Development Of Advanced Scatterometrymentioning

confidence: 99%

Joint Research on Scatterometry and AFM Wafer Metrology

Bodermann¹,

Buhr²,

Danzebrink³

et al. 2011

AIP Conference Proceedings

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Abstract. Supported by the European Commission and EURAMET, a consortium of 10 participants from national metrology institutes, universities and companies has started a joint research project with the aim of overcoming current challenges in optical scatterometry for traceable linewidth metrology. Both experimental and modelling methods will be enhanced and different methods will be compared with each other and with specially adapted atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurement systems in measurement comparisons. Additionally novel methods for sophisticated data analysis will be developed and investigated to reach significant reductions of the measurement uncertainties in critical dimension (CD) metrology. One final goal will be the realisation of a wafer based reference standard material for calibration of scatterometers.

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“…3,4 The past two decades have also seen the prodigious rise of scatterometry or optical critical dimension (OCD) metrology for in-line process control. 5–7 Despite steadily increasing demands on the accuracy of the required models, both SEM and scatterometry continue to be widely utilized for process metrology.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

Choi

Park

Ahn

et al. 2016

J. Micro/Nanolith. MEMS MOEMS

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The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature sizes and the growing requirement to characterize structures in more than just a single critical dimension. For scanning electron microscopy, this has resulted in increasing sophistication of imaging models. For critical dimension atomic force microscopes (CD-AFMs), this has resulted in the need for smaller and more complex tips. Carbon nanotube (CNT) tips have thus been the focus of much interest and effort by a number of researchers. However, there have been significant issues surrounding both the manufacture and use of CNT tips. Specifically, the growth or attachment of CNTs to AFM cantilevers has been a challenge to the fabrication of CNT tips, and the flexibility and resultant bending artifacts have presented challenges to using CNT tips. The Korea Research Institute for Standards and Science (KRISS) has invested considerable effort in the controlled fabrication of CNT tips and is collaborating with the National Institute of Standards and Technology on the application of CNT tips for CD-AFM. Progress by KRISS on the precise control of CNT orientation, length, and end modification, using manipulation and focused ion beam processes, has allowed us to implement ball-capped CNT tips and bent CNT tips for CD-AFM. Using two different generations of CD-AFM instruments, we have evaluated these tip types by imaging a line/space grating and a programmed line edge roughness specimen. We concluded that these CNTs are capable of scanning the profiles of these structures, including re-entrant sidewalls, but there remain important challenges to address. These challenges include tighter control of tip geometry and careful optimization of scan parameters and algorithms for using CNT tips.

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Progress toward traceable nanoscale optical critical dimension metrology for semiconductors

Cited by 12 publications

References 15 publications

First steps towards a scatterometry reference standard

First steps towards a scatterometry reference standard

Joint Research on Scatterometry and AFM Wafer Metrology

Evaluation of carbon nanotube probes in critical dimension atomic force microscopes

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