Promising thermoelectric performance in n-type AgBiSe<sub>2</sub>: effect of aliovalent anion doping

Guin, Satya N.; Srihari, Velaga; Biswas, Kanishka

doi:10.1039/c4ta04912h

Cited by 131 publications

(124 citation statements)

References 34 publications

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“…9 mol %) in the hexagonal phase of AgBiSe 2 does not stabilize high symmetry cubic phase at ambient conditions . AgBiSe 2 rich (AgBiSe 2 ) 1− x (GeSe) x ( x =0–0.09), however, undergoes a temperature‐dependent hexagonal ( P

\overset{3}{true}

m 1; room temperature phase) to cubic ( Fm

\overset{3}{true}

m ) structural phase transition with increasing temperature via an intermediate rhombohedral phase ( R

\overset{3}{true}

m ), which is a well‐known phase transition in pristine AgBiSe 2 …”

Section: Figurementioning

confidence: 99%

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe₂: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

et al. 2018

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The realization of n-type Ge chalcogenides is elusive owing to intrinsic Ge vacancies that make them p-type semiconductors. GeSe crystallizes into a layered orthorhombic structure similar to SnSe at ambient conditions. The high-symmetry cubic phase of GeSe is predicted to be stabilized by applying 7 GPa external pressure or by enhancing the entropy by increasing to temperature to 920 K. Stabilization of the n-type cubic phase of GeSe at ambient conditions was achieved by alloying with AgBiSe (30-50 mol %), enhancing the entropy through solid solution mixing. The interplay of positive and negative chemical pressure anomalously changes the band gap of GeSe with increasing the AgBiSe concentration. The band gap of n-type cubic (GeSe) (AgBiSe ) (0.30≤x≤0.50) has a value in the 0.3-0.4 eV range, which is significantly lower than orthorhombic GeSe (1.1 eV). Cubic (GeSe) (AgBiSe ) exhibits an ultralow lattice thermal conductivity (κ ≈0.43 W m K ) in the 300-723 K range. The low κ is attributed to significant phonon scattering by entropy-driven enhanced solid-solution point defects.

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\overset{3}{true}

m 1; room temperature phase) to cubic ( Fm

\overset{3}{true}

m ) structural phase transition with increasing temperature via an intermediate rhombohedral phase ( R

\overset{3}{true}

m ), which is a well‐known phase transition in pristine AgBiSe 2 …”

Section: Figurementioning

confidence: 99%

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe₂: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

et al. 2018

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“…We found a more than 2 times increase on figure-of-merit (ZT). Historically, the thermoelectric performance of n-type lead-free S-based materials is not more than 0.7 at 773 K [29][30][31][32][33][34], which needs to be improved so to pair up with the p-type to make modules more efficient. A ZT of 0.5 was achieved at 873 K together with a power factor of 20 µW cm -1 K -2 for the Ni doped CoSbS samples.…”

mentioning

confidence: 99%

“…Due to the non-toxic, inexpensive, and ultrahigh abundance of sulfur (S), sulfur-based thermoelectric materials have drawn some attentions and their ZT values larger than unit have recently been achieved, especially in the p-type [26][27][28]. Historically, the thermoelectric performance of n-type lead-free S-based materials is not more than 0.7 at 773 K [29][30][31][32][33][34], which needs to be improved so to pair up with the p-type to make modules more efficient. In addition, most S-based thermoelectric materials including PbS exhibit a low or modest power factor less than 15 µW cm -1 K -2 [26-34].…”

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confidence: 99%

The effect of nickel doping on electron and phonon transport in the n-type nanostructured thermoelectric material CoSbS

et al. 2015

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The effect of Ni doping on both electron and phonon transport properties of nanostructured CoSbS was investigated in this study. We found a more than 2 times increase on figure-of-merit (ZT). The noticeable enhancement is mainly attributed to the optimized carrier concentration, high effective mass and strong electron-phonon scattering upon Ni doping. A ZT of 0.5 was achieved at 873 K together with a power factor of 20 µW cm -1 K -2 for the Ni doped CoSbS samples. The reduced lattice thermal conductivity via the strong electron-phonon scattering for Ni doped CoSbS samples is confirmed by the quantitative 2 calculation of the various phonon scattering mechanisms according to the Callaway model. Keyword: CoSbS; Ni doping; electron-phonon scattering; thermoelectric performance.[12], while reducing the thermal conductivity commonly benefits from solid solution [13][14][15], nanoscale second phase [16,17], bulk nanostructuring [18][19][20], and all length-scale phonon scattering via hierarchical architecturing [21][22][23].Despite the significant advances in bulk thermoelectric systems, the most leading thermoelectric material, such as Bi 2 Te 3 [23], PbTe [6,8,10,21], and SiGe [20, 25] mainly consist of expensive elements such as Te and Ge, or toxic elements such as Pb. Due to the non-toxic, inexpensive, and ultrahigh abundance of sulfur (S), sulfur-based thermoelectric materials have drawn some attentions and their ZT values larger than unit have recently been achieved, especially in the p-type [26][27][28]. Historically, the thermoelectric performance of n-type lead-free S-based materials is not more than 0.7 at 773 K [29][30][31][32][33][34], which needs to be improved so to pair up with the p-type to make modules more efficient. In addition, most S-based thermoelectric materials including PbS exhibit a low or modest power factor less than 15 µW cm -1 K -2 [26-34]. However, large power factor should be as important as high ZT values for thermoelectric devices since the output power directly depends on power factor in practical power generation applications [35, 36]. CoSbS compound is a natural mineral named Costibite or Paracostibite, discovered in Canada and Australia. It crystalizes in orthorhombic space group 61 (Pbca) with a lower symmetry. There are eight [CoSb 3 S 3 ] octahedral in one unit cell where one Co is octahedrally coordinated to three Sb and three S atoms as shown in Figure 1a [37]. Recently, Carlini et al. first reported the synthesis and microstructure of CoSbS compound [38], then, Parker et al. theoretically and experimentally investigated the thermoelectric performance of Ni dopedCoSbS samples, with a modest power factor ~15 µW cm -1 K -2 and a relatively high thermal conductivity ~3.8 W m -1 K -1 at 773 K (A constant value Cp of 0.35 J g -1 K -1 was used to calculate the thermal conductivity) [39]. However, the specific mechanism that Ni doping boosts the thermoelectric performance of CoSbS system in the work of Parker et al. is still unclear. Therefore, our motivation is to systematically stu...

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“…1 The exploration from metals to alloys and from single crystals to nanostructures pushed the ZT values higher and higher. [1][2][3][4][5][6][7][8][9][10][11] Many approaches, such as resonant doping 12,13 , band convergence 14,15 , all-scale hierarchical structure 16,17 , etc. have been realized in the group IV-VI semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe_1‐xS_x by Iodine Doping

Zhang

Chere

Sun

et al. 2015

Advanced Energy Materials

302

240

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We prepared iodine-doped n-type SnSe polycrystalline by melting and hot pressing. The prepared material is anisotropic with a peak ZT of ~0.8 at about 773 K measured along the hot pressing direction. This is the first report on TE properties of n-type Sn chalcogenide alloys.With increasing content of iodine, the carrier concentration changed from 2.3×10 17 cm -3 (p-type)to 5.0×10 15 cm -3 (n-type) then to 2.0×10 17 cm -3 (n-type). The decent ZT is mainly attributed to the intrinsically low thermal conductivity due to the high anharmonicity of the chemical bonds like those in p-type SnSe. By alloying with 10 atm. % SnS, even lower thermal conductivity and an enhanced Seebeck coefficient were achieved, leading to an increased ZT of ~1.0 at about 773 K measured also along the hot pressing direction.

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Promising thermoelectric performance in n-type AgBiSe₂: effect of aliovalent anion doping

Cited by 131 publications

References 34 publications

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe₂: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe₂: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

The effect of nickel doping on electron and phonon transport in the n-type nanostructured thermoelectric material CoSbS

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe_1‐xS_x by Iodine Doping

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Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping

Cited by 131 publications

References 34 publications

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe2: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe2: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

The effect of nickel doping on electron and phonon transport in the n-type nanostructured thermoelectric material CoSbS

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe1‐xSx by Iodine Doping

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Promising thermoelectric performance in n-type AgBiSe₂: effect of aliovalent anion doping

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe₂: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Stabilizing n‐Type Cubic GeSe by Entropy‐Driven Alloying of AgBiSe₂: Ultralow Thermal Conductivity and Promising Thermoelectric Performance

Studies on Thermoelectric Properties of n‐type Polycrystalline SnSe_1‐xS_x by Iodine Doping