Propagation of ripple patterns on Si during ion bombardment

Hofsäß, H.; Zhang, K.; Gehrke, Hans-Gregor; Brüsewitz, Christoph

doi:10.1103/physrevb.88.075426

Cited by 33 publications

(26 citation statements)

References 60 publications

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“…Likewise, the in-plane transport velocity of the ripple pattern is predicted in the BH model to oppose the direction of the ion beam up to high angles of incidence, in contrast with experiments on e.g. glass [202], while agreeing with recent data on Si [74]. And we have already mentioned in the first sections the conflict between the BH prediction of pattern formation at any angle of incidence and the experimental existence of a threshold angle for ripple formation on Si.…”

Section: The Bradley-harper Theorysupporting

confidence: 55%

“…Therefore, the potential influence of Ga impurities as a trigger for pattern formation should be taken into account. Recently, the propagation of ripples has also been verified by irradiation with inert ions by Hofsä ss et al [74]. In this case, the authors used markers (grooves) on the target to follow the movement of characteristic pattern features, as shown in Fig.…”

Section: Low-energy ( < 10 Kev)mentioning

confidence: 99%

“…Detailed TEM and EDX analysis did show that the Fe atoms formed silicide (Fe x Si) aggregates on the ripple structures. Recently, Hofsä ss et al [74] have studied the propagation of the ripples induced under Fe incorporation in their set-up. They have found that, in contrast to the case of the metalfree case, the ripples propagate always in the same direction, which is towards the Fe clamp.…”

Section: Anisotropic Patterns: Nanoripplesmentioning

confidence: 99%

See 2 more Smart Citations

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

166

201

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Section: The Bradley-harper Theorysupporting

confidence: 55%

Section: Low-energy ( < 10 Kev)mentioning

confidence: 99%

Section: Anisotropic Patterns: Nanoripplesmentioning

confidence: 99%

See 1 more Smart Citation

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Muñoz-García

Vázquez

Castro

et al. 2014

Materials Science and Engineering: R: Reports

166

201

View full text Add to dashboard Cite

“…Other continuum models which were developed to describe pattern formation on surfaces consider plastic flow in a viscoelastic continuum under ion induced stress [10][11][12] or hydrodynamic behaviour of an amorphous surface layer exposed to ion irradiation [13][14][15][16]. A recent experimental study on the lateral ripple propagation velocity for Si irradiated with 10 keV Xe ions reveals good agreement with the prediction by the BH model, indicating that curvature-dependent sputter erosion must play a significant role for ripple for pattern formation [17].…”

Section: Introductionsupporting

confidence: 53%

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Hofsäß

2013

Appl. Phys. A

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The contribution of curvature dependent sputtering and mass redistribution to ion-induced self-organized formation of periodic surface nanopatterns is revisited. Ion incidence angle-dependent curvature coefficients and ripple wavelengths are calculated from 3-dimensional collision cascade data obtained from binary collision Monte Carlo simulations. Significant modifications concerning mass redistribution compared to the model of Carter and Vishnyakov and also models based on crater functions are introduced. Furthermore, I find that curvature-dependent erosion is the dominating contribution to pattern formation, except for very low-energy irradiation of a light matrix with heavy ions. The major modifications regarding mass redistribution and ion-induced viscous flow are related to the ion incidence angle-dependent thickness of the irradiated layer. A smaller modification concerns the relaxation of inward-directed mass redistribution. Ioninduced viscous flow in the surface layer also depends on the layer thickness and is thus strongly angle dependent. Simulation results are presented and compared to a variety of published experimental results. The simulations show that in most cases curvature-dependent erosion is the dominant contribution to surface instability and ripple pattern formation and also determines the pattern orientation transition. The simulations predict the occurrence of perpendicular ripple patterns at larger ion incidence angles, in agreement with experimental observations. Mass redistribution causes stabilization of the surface at near-normal ion incidence angles and dominates pattern formation only at very low ion energies.

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“…Ion beam parameters (species, incidence angle, energy, flux, etc) and substrate parameters (material, temperature, initial surface topography, etc) interact to generate the features of such nanopatterns. Recently, numerous experiments on sputtering with simultaneous co-deposition [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38][39] and theoretical studies [40][41][42][43][44][45][46][47] on simultaneous metal co-deposition during IBS or surfactant sputtering [32-38, 46, 47] have been performed to elucidate the formation mechanism of self-organized nanostructures and to generate various nanopatterns. In principle, the simultaneous use of metal atoms modulates the sputtering yield of the substrate during IBS, which results in diverse physical and chemical phenomena (e.g., island formation or phase separation).…”

Section: Introductionmentioning

confidence: 99%

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

et al. 2017

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The ion beam sputtering (IBS) of smooth mono-elemental Si with impurity co-deposition is extended to a pre-rippled binary compound surface of fused silica (SiO 2 ). The dependence of the rms roughness and the deposited amount of Al on the distance from the Al source under Ar + IBS with Al co-deposition was investigated on smooth SiO 2 , pre-rippled SiO 2 , and smooth Si surfaces, using atomic force microscopy and X-ray photoelectron spectroscopy. Although the amounts of Al deposited on these three surfaces all decreased with increasing distance from the Al target, the morphology and rms roughness of the smooth Si surface did not demonstrate a strong distance dependence. In contrast to smooth Si, the rms roughness of both the smooth and pre-rippled SiO 2 surfaces exhibited a similar distance evolution trend of increasing, decreasing, and final stabilization at the distance where the results were similar to those obtained without Al co-deposition. However, the pre-rippled SiO 2 surfaces showed a stronger modulation of rms roughness than the smooth surfaces. At the incidence angles of 60° and 70°, dot-decorated ripples and roof-tiles were formed on the smooth SiO 2 surfaces, respectively, whereas nanostructures of closely aligned grains and blazed facets were generated on the pre-rippled SiO 2 , respectively. The combination of impurity co-deposition with pre-rippled surfaces was found to facilitate the formation of novel types of nanostructures and morphological growth. The initial ripples act as a template to guide the preferential deposition of Al on the tops of the ripples or the ripple sides facing the Al wedge, but not in the valleys between the ripples, leading to 2D grains and quasiblazed grating, which offer significant promise in optical applications. The rms roughness enhancement is attributed not to AlSi, but to AlO x F y compounds originating mainly from the Al source.

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Propagation of ripple patterns on Si during ion bombardment

Cited by 33 publications

References 60 publications

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Self-organized nanopatterning of silicon surfaces by ion beam sputtering

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Nanostructures on fused silica surfaces produced by ion beam sputtering with Al co-deposition

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