Properties of a solid state device with mobile dopants: Analytic analysis for the thin film device

Abstract

Current-voltage relations, electric field, and charge distribution profiles are calculated for a device in which the dopants are mobile. The thin film limit is discussed. The model solved is restricted to: (a) mobile holes and acceptors, (b) steady state, and (c) metal electrodes which block the ionic current. The solution is expressed as a series expansion in the small parameter δ=L/λD, where L is the sample thickness and λD is a Debye length. The second order of the series expansion is found to vanish, thus the corrections to the leading order appear only in the third term. The approximated analytic solution agrees with numerical results from a previous publication up to the quite high value of δ=1. The leading order in the I-V relations and in the hole distribution is independent of the acceptor motion. This implies that for thin devices of this form any motion of the dopants may be neglected and that dopants need not be limited only to those which exhibit low diffusion constants. Rectification is observed as long as asymmetry is introduced by two different contact potentials. This holds whether the contacts lead to depletion or accumulation.

Electrochemical strain microscopy with blocking electrodes: The role of electromigration and diffusion

“…We consider the case when the extant donors in the material are neutral or singly ionized. The neutral donors are immobile, whereas the charged ones are mobile 44 . Correspondingly, in this case the total amount of mobile donors is equal to total amount of conductive electrodes, and the analysis of more complicated case of strong background conductance or ion concentration is deferred to future studies.…”

Локальний Електромеханічний Відгук Тонких Плівок Напівпровідників-Іоніків

“…Нинi iнтенсивно дослiджуються рiзноманiтнi альтернативи сучасним пристроям пам'ятi з метою отримання бiльш потужних i функцiональних систем [1]. Однiєю з перспективних концепцiй є концепцiя резистивної пам'ятi [2], що ґрунтується на напiвпровiдниках iз мiшаним типом провiдностi, наприклад, iонно-електронним [3,4]. У тонких плiвках, що використовуються в комiрках резистивної пам'ятi, принципово важливою є електромiграцiя та дифузiя iонiв.…”

“…Всеохоплююча аналiтична теорiя електромiграцiї i дифузiї носiїв заряду в iонiках-напiвпровiдниках та їх тонких плiвках є складною та остаточно нерозв'язаною задачею [1][2][3][4]14]. Зокрема, вольт-ампернi характеристики було проаналiзовано загалом чисельно, i тiльки в рамках наближення Больцмана для хiмiчного потенцiалу та/або лiнiйної теорiї екранування Дебая в наближеннi сталої провiдностi, незалежної вiд концентрацiї частинок [3, 4, 15-ISSN 2071-0194.…”

Thermodynamics of electromechanically coupled mixed ionic-electronic conductors: Deformation potential, Vegard strains, and flexoelectric effect

“…all currents are absent). The analytical solution for acceptors and holes redistribution in a thick MIEC film and its surface displacement are derived in Appendix A assuming that film thickness is valid [77,78,79,93], since the total amount of ionized acceptors is conserved. Thus only the electron subsystem contributes to the surface displacement (18) for the ion-blocking electrodes as:…”