Properties of Ammonothermal Crystals

FreitasJr., J. A.; Zając, M.

doi:10.1007/978-3-030-56305-9_16

Springer Series in Materials Science

2021

DOI: 10.1007/978-3-030-56305-9_16

|View full text |Cite

Properties of Ammonothermal Crystals

J. A. FreitasJr.

M. Zając

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2022

2023

Publication Types

Select...

Article2

Relationship

Self Cite0

Independent2

Authors

Journals

Cited by 2 publications

(1 citation statement)

References 95 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Most bright LEDs are based on group III–V semiconductors or their alloys. Indeed, there are several reported studies of complex semiconductors belonging to the III–V family consisting of elements of group III (B, Al, Ga, and In) and group V (N, P, As, and Sb). − In particular, III–N alloys exhibit an ultrawide band gap due to the quantum confinement effect . Therefore, III–N alloys find applications in blue LEDs and ultraviolet optoelectronic devices − and in high-power electronic devices .…”

mentioning

confidence: 99%

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Stratulat,

Tantardini,

Azizi

et al. 2023

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

We propose the Zn2V(1–x)Nb x N3 alloy as a new promising material for optoelectronic applications, in particular for light-emitting diodes (LEDs). We perform accurate electronic-structure calculations of the alloy for several concentrations x using density-functional theory with meta-GGA exchange–correlation functional TB09. The band gap is found to vary between 2.2 and 2.9 eV with varying V/Nb concentration. This range is suitable for developing bright LEDs with tunable band gap as potential replacements for the more expensive Ga(1–x)In(x)N systems. Effects of configurational disorder are taken into account by explicitly considering all possible distributions of the metal ions within the metal sublattice for the chosen supercells. We have evaluated the band gap’s nonlinear behavior (bowing) with variation of V/Nb concentration for two possible scenarios: (i) only the structure with the lowest total energy is present at each concentration and (ii) the structure with minimum band gap is present at each concentration, which corresponds to experimental conditions when also metastable structures are presents. We found that the bowing is about twice larger in the latter case. However, in both cases, the bowing parameter is found to be lower than 1 eV, which is about twice smaller than that in the widely used Ga(1–x)In(x)N alloy. Furthermore, we found that both crystal volume changes due to alloying and local effects (atomic relaxation and the V–N/Nb–N bonding difference) have important contributions to the band gap bowing in Zn2V(1–x)Nb x N3.

show abstract

mentioning

confidence: 99%

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Stratulat,

Tantardini,

Azizi

et al. 2023

J. Phys. Chem. Lett.

View full text Add to dashboard Cite

show abstract

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

2022

View full text Add to dashboard Cite

GaN and its alloys with InN and AlN are of technological importance for a variety of optical, electronic, and optoelectronic devices due to its high thermal conductivity, wide band gap, high breakdown voltage and high saturation velocity. GaN-based devices now provide superior performance for a variety of high power, high frequency, high temperature, and optical applications. The major roadblock for the full realization of Nitride semiconductor potential is still the availability of affordable large-area and high-quality native substrates with controlled electrical properties. Despite the impressive accomplishments recently achieved by techniques such as hydride vapor phase epitaxy and ammonothermal for GaN growth, much more must be attained before establishing a fully satisfactory bulk growth method for this material. Recent results suggest that ammonothermal GaN wafers can be successfully used as seeds to grow thick freestanding GaN wafers by hydride vapor phase epitaxy. A brief review of defect-sensitive optical and paramagnetic spectroscopy techniques employed to evaluate structural, optical, and electronic properties of the state-of-the-art bulk and thick-film (quasi-bulk) Nitride substrates and homoepitaxial films is presented. Defects control the performance of devices and feeding back knowledge of defects to growth efforts is key to advancing technology.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

Properties of Ammonothermal Crystals

Cited by 2 publications

References 95 publications

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

Contact Info

Product

Resources

About

Properties of Ammonothermal Crystals

Cited by 2 publications

References 95 publications

Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes

Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes

Characterization of Defects in GaN: Optical and Magnetic Resonance Techniques

Contact Info

Product

Resources

About

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes

Electronic Properties of Zn₂V_(1–x)Nb_xN₃ Alloys to Model Novel Materials for Light-Emitting Diodes