Properties of dry-etched CdTe-epitaxial layer surfaces and microstructures

Neswal, M.; Greβlehner, K.H.; Lischka, K.; Bauer, Péter; Brandstötter, A.; Lübke, K.

doi:10.1016/0921-5107(93)90024-h

Materials Science and Engineering: B

1993

DOI: 10.1016/0921-5107(93)90024-h

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Properties of dry-etched CdTe-epitaxial layer surfaces and microstructures

M. Neswal

K.H. Greβlehner

K. Lischka

et al.

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Cited by 2 publications

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“…The assumption that the B V I component is reacting with the hydrogen was supported by Auger spectroscopy on the etched surfaces [16]. The similar dependence of the etch rate on the band gap energy of II-VI and IV-VI compounds indicates that the reaction in equation (3) describes also that of the IV-VI compounds just by exchanging A I I with A I V .…”

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confidence: 90%

plasma etching of IV-VI semiconductor nanostructures

Schwarzl

Heiß

Kocher-Oberlehner

et al. 1999

Semicond. Sci. Technol.

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We investigate plasma etching of IV-VI nanostructures using a CH 4 /H 2 gas mixture. For various IV-VI compounds we find that the etch rate decreases with the energy band gap. For Pb 1−x Eu x Te, in contrast, the etch rate decreases drastically with increasing Eu content. This property can be utilized for selective etching. Furthermore, we demonstrate IV-VI quantum wires with vertical side walls by a combination of laser holography and CH 4 /H 2 /Ar plasma etching.

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mentioning

confidence: 90%

plasma etching of IV-VI semiconductor nanostructures

Schwarzl

Heiß

Kocher-Oberlehner

et al. 1999

Semicond. Sci. Technol.

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Epitaxial overgrowth of II–VI compounds on patterned substrates

Schikora

Hausleitner²,

Einfeldt

et al. 1994

Journal of Crystal Growth

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The selected area epitaxial overgrowth of narrow gap HgTe as well as wide gap CdTe and ZnTe on CdTe/GaAs substrates, which had been structured by dry etching techniques, has been investigated. A plasma etching process using a barrel reactor with CHCH2 gases has been employed to prepare stripes with a width of about 1 J.Lm with anisotropic as well as isotropic etching profiles. It has been found, that the selected area HgTe overgrowth takes place with a high local selectivity to the low index planes of the patterned surface. In contrast, the selected area overgrowth of the wide gap CdTe and ZnTe is controlled by anisotropic growth kinetics provided that the substrate temperature is not lower than 220°C and the starting surface consists of well developed low index crystallographic planes.

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Properties of dry-etched CdTe-epitaxial layer surfaces and microstructures

Cited by 2 publications

References 13 publications

plasma etching of IV-VI semiconductor nanostructures

plasma etching of IV-VI semiconductor nanostructures

Epitaxial overgrowth of II–VI compounds on patterned substrates

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