2000
DOI: 10.1016/s0925-9635(99)00262-9
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Properties of electron field emitters prepared by selected area deposition of CVD diamond carbon films

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Cited by 14 publications
(8 citation statements)
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“…The activation energy of the carriers with dopant levels of 2000 ppm and 3000 ppm is about 0.58 eV. This value approximately corresponds to other results (9) (10) . The resistivity of the film fabricated with more than 5000 ppm of PH 3 /CH 4 has no temperature dependence.…”
Section: P-doped Diamond Growthsupporting
confidence: 88%
See 1 more Smart Citation
“…The activation energy of the carriers with dopant levels of 2000 ppm and 3000 ppm is about 0.58 eV. This value approximately corresponds to other results (9) (10) . The resistivity of the film fabricated with more than 5000 ppm of PH 3 /CH 4 has no temperature dependence.…”
Section: P-doped Diamond Growthsupporting
confidence: 88%
“…In the seeding process, diamond powder is adhered to the substrate by the US (ultrasonic) treatment and the powder particles are used as diamond nuclei. Additionally, this method prevents the formation of SiC on the substrate (8) (9) .…”
Section: Introductionmentioning
confidence: 99%
“…[19, 20]. On the other hand, the pre-growth selective deposition involves various crucial processing steps such as patterning of mask materials [21] and etching [22]. …”
Section: Introductionmentioning
confidence: 99%
“…The nanoseeding technique is now being routinely used to grow diamond on ceramics, 105,106 cutting tools [107][108][109][110] etc. Researchers have also used ND solutions for selective seeding using ink-jet style writing technology, [111][112][113][114] contact printing, 115 photolithography [116][117][118] or masking 116,119,120 to dene diamond structures without post diamond growth lithography and etching. The size dependence of the seed solution has also been investigate by some groups.…”
Section: Electrostatic Seedingmentioning
confidence: 99%