Spatially controlled fabrication of a bright fluorescent nanodiamond-array with enhanced far-red Si-V luminescence

Abstract

We demonstrate a novel approach to precise pattern fluorescent nanodiamond-arrays with enhanced far-red intense photostable luminescence from silicon-vacancy (Si-V) defect centers. The precision-patterned pre-growth seeding of nanodiamonds is achieved by scanning probe “Dip-Pen” nanolithography technique using electrostatically-driven transfer of nanodiamonds from “inked” cantilevers to a UV-treated hydrophilic SiO2 substrate. The enhanced emission from nanodiamond-dots in the far-red is achieved by incorporating Si-V defect centers in subsequent chemical vapor deposition treatment. The development of a suitable nanodiamond ink, mechanism of ink transport, and effect of humidity, dwell time on nanodiamond patterning are investigated. The precision-patterning of as-printed (pre-CVD) arrays with dot diameter and dot height as small as 735 nm ± 27 nm, 61 nm ± 3 nm, respectively and CVD-treated fluorescent ND-arrays with consistently patterned dots having diameter and height as small as 820 nm ± 20 nm, 245 nm ± 23 nm, respectively using 1 s dwell time and 30% RH is successfully achieved. We anticipate that the far-red intense photostable luminescence (~738 nm) observed from Si-V defect centers integrated in spatially arranged nanodiamonds could be beneficial for the development of the next generation fluorescent based devices and applications.

Determination of temperature dependent parameters of zero-phonon line in photo-luminescence spectrum of silicon-vacancy centre in CVD diamond thin films

“…These applications are determined not only by the intrinsic properties of diamond but also by crystallographic defects and impurities. Considerable attention is recently devoted to the creation of colour centres with potential uses as solid state light emitters for quantum optics [6], photonics [7] and biomedicine [5]. Such uses require controllable fabrication of structures (single diamond crystals, nanorods, periodic structures, etc.)…”

Influence of gas chemistry on Si-V color centers in diamond films

“…Si‐related centers are often and commonly incorporated in all chemically vapor deposited (CVD) diamonds by the etching of Si substrates, quartz windows, and bell jars or by addition of Si containing gasses to the gas mixture . To achieve PL enhancement and reproducible fabrication, studies related to the substrate material morphology and quality , gas composition or creating special structures were carried out. Due to carbon–carbon sp 3 hybridized bonds, diamond can be easily functionalized with various chemical groups which can also influence the optical activity of nearly localized color centers.…”

Nanodiamonds: From Synthesis and Purification to Deposition Techniques, Hybrids Fabrication and Applications

“…To get an accurate positioning of NDs at nanometer scale, a dip-pen nanolithography approach was recently reported [142]. HPHT NDs suspended in polymeric ink were prepared in DMSO, polyethylenimine (PEI) and glycerol.…”

“…Proteins can form 1D, 2D or 3D scaffolds on Fig. 17 Arrays of HPHT NDs with Si-V centers observed by epifluorescence, see details in [142] scale bar 20 μm (with courtesy of Singh et al [142]) which NDs can be precisely inserted (Fig. 18).…”