Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

Pan, Zhanchang; Zhang, Pengwei; Tian, Xinlong; Guo, Chunyu; Xie, Yinghao; Zhang, Huangchu; Zeng, Xiangfu; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang

doi:10.1016/j.jallcom.2013.04.132

Cited by 61 publications

(26 citation statements)

References 34 publications

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“…The enhanced band gap has also been reported previously [25,27,47,48]. Pan et al [39] also have found an increase in the bandgap from 3.21 eV for ZnO to 3.36 eV for 2% Sn and 3% F co-doped FTZO thin film. BursteinMoss effect is mainly responsible for this kind of broadening (blue shifting) of the energy band [25,48].…”

Section: Results and Discussion 31 Structural Propertiessupporting

confidence: 80%

“…1 clearly shows that there is a shift towards lower 2θ values indicating that there is a slight expansion in the lattice which is also reported by Venkataraj et al [37]. However, this is in contrast to the reports wherein a shift towards higher 2θ values has been found [22,24,38,39]. Since Sn 4+ and F -both are having ionic radii slightly lower than Zn 2+ and O 2-respectively, it is expected that there would be a slight lattice contraction.…”

Section: Results and Discussion 31 Structural Propertiessupporting

confidence: 54%

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An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties

Mallick

Sarkar

Ghosh

et al. 2015

Journal of Alloys and Compounds

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On the face of massively growing market of transparent optoelectronics, developing ZnO-based transparent conductive thin films as a promising substitute for indium-free transparent electrode is extremely important. However, the detailed function of the dopants, especially co-dopants acting on the electrical and optical properties of ZnO-based transparent conductive thin films is not clear yet. We present a detailed comparative investigation on the structural, electrical and optical properties of pulsed laser deposited ZnO thin films co-doped with Sn and F for the first time. An unexpected expansion in the lattice structure has been observed when Zn 2+ are replaced by Sn 4+ having smaller ionic radius. Electrical measurements show that there is no anticipated change in the carrier concentration with the dopant concentration. A minimum resistivity of 2.56×10 -3 Ohm-cm with a carrier concentration of 4.41×10 20 cm -3 has been obtained for 1 at% each Sn-F co-doped film. Most interestingly, a significant improvement in the ultraviolet (UV)/visible (VIS) photoluminescence peak intensity in Sn doped and Sn-F co-doped films in correlation with the structural and electrical properties allows us to propose that Sn doping into ZnO lattice causes a screening of the native Zn vacancy defects. While the presence of F co-dopant induces Sn 2+ to occupy the lattice sites, as evidenced from the lattice expansion, an insignificant increase in the carrier concentration as well as enhanced UV emission of the co-doped films. The results obtained in this study shed light on the development of ZnO-based transparent electrodes.

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Section: Results and Discussion 31 Structural Propertiessupporting

confidence: 80%

Section: Results and Discussion 31 Structural Propertiessupporting

confidence: 54%

An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties

Mallick

Sarkar

Ghosh

et al. 2015

Journal of Alloys and Compounds

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“…ZnO material doped with transition-metal (TM) ions has been grown in various morphologies such as nanowires, nanorods and nanotubes [6][7][8]. Some methods to deposit TM-doped 1-D ZnO nanostructures include RF magnetron sputtering [9], vapor phase transport [10], pulsed laser deposition [11], spray pyrolysis [12] and chemical bath deposition (CBD) [13].…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of Mn-doped ZnO nanorods grown in an ordered periodic honeycomb pattern using nanosphere lithography

Yılmaz

Garry

McGlynn

et al. 2014

Ceramics International

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“…The dislocation density is defined as the length of dislocation lines per unit volume of the crystal was estimated from the following relation using the simple approach of Williamson and Smallman (Pan et al 2013). The value of dislocation density (d) is calculated using the relation:…”

Section: Resultsmentioning

confidence: 99%

Highly oriented and physical properties of sprayed anatase Sn-doped TiO2 thin films with an enhanced antibacterial activity

2015

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Pristine TiO 2 and Sn-doped TiO 2 thin films with different Sn doping levels (2, 4, 6 and 8 at.%) were deposited by employing a simplified spray pyrolysis technique. The XRD pattern of the films confirmed tetragonal structure with the polycrystalline nature. The films exhibited a pure anatase titanium dioxide (TiO 2 ) with a strong orientation along (101) plane. The scanning electron microscopy image of 6 at.% Sn-doped TiO 2 thin film depicted nanosized grains with porous nature. The atomic force microscopy study had shown the columnar arrangement of grains with the increase in particle size and surface roughness for 6 at.% Sn-doped TiO 2 thin films. The optical transmittance was increased with the decrease in the optical energy band gap. The optical constants such as extinction coefficient and refractive index were determined. The intensity of the photoluminescence emission was observed at 398 nm for doped films. The resistivity decreased with the increasing carrier concentration and Hall mobility. The incorporation of Sn into TiO 2 matrix yielded a well-pronounced antibacterial activity for Bacillus subtilis.

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Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method

Cited by 61 publications

References 34 publications

An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties

An insight into doping mechanism in Sn–F co-doped transparent conducting ZnO films by correlating structural, electrical and optical properties

Synthesis and characterization of Mn-doped ZnO nanorods grown in an ordered periodic honeycomb pattern using nanosphere lithography

Highly oriented and physical properties of sprayed anatase Sn-doped TiO2 thin films with an enhanced antibacterial activity

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