Properties of SiO2 and Al2O3 films for electrical insulation applications deposited by reactive pulse magnetron sputtering

Synthesis and fine patterning of organic–inorganic composite SiO2–Al2O3 thick films

“…The reduction in thickness is ascribed to the volatilization of residual organics and the densification of gel films. As compared with the inorganic films previously reported [9][10][11], the film thickness is significantly enhanced, which can meet the requirements of integrated optical devices. In this work we use MAPTMS as the Si precursor to prepare SiO 2 -Al 2 O 3 films.…”

“…In last years, SiO 2 -Al 2 O 3 films have been fabricated by many techniques such as evaporation [3], chemical vapor deposition [8], sputtering [9], and sol-gel [10][11][12]. Regardless of the deposition methods, however, they have not afforded to the required film thickness, even by a timeconsuming iterative coating approach [7].…”

“…Regardless of the deposition methods, however, they have not afforded to the required film thickness, even by a timeconsuming iterative coating approach [7]. The maximum attainable thickness is usually less than 1 mm for the crackfree SiO 2 -Al 2 O 3 films [9][10][11]. The sol-gel technique is of a highly flexible and inexpensive process, providing a suitable synthetic route for depositing various composite films with an acceptable chemical homogeneity at low growth temperatures [13].…”

Structure, morphology and optical properties of SiO2−x thin films prepared by plasma-assisted pulsed laser deposition

“…Silicon dioxide (SiO 2 ) thin film is an important material for semiconductor industry [9][10][11][12] as the gate dielectric material, the low refractive index choice of the multilayer optical thin films [13][14][15][16][17][18] as the antireflective coating or the active waveguide, and so on. Up to now, several physical vapour deposition methods have been explored to prepared silicon oxide (SiO 2Àx ) coatings, including plasma ion-assisted deposition [19], magnetron sputtering deposition [20], and ebeam deposition [19,21] etc.…”

Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures

“…On the other hand, insulating dielectric films are used as gate dielectrics in MOSFET structures, as insulating layers in multilevel interconnects, as capacitor dielectrics in dynamic random access memory (DRAM), in thin film transistors (TFT), as intermetal insulators in detector and sensor applications, or for solar energy devices. Requirements on these films are high breakdown field strength, high resistance, low leakage currents and low defect density [8].…”