Implantation of S and Se into
normalGaAs
has been studied with a novel contactless mobility measurement. The method, in which the mobility is obtained from a microwave measurement of the conducting layer's magnetoconductivity, is described in detail. Comparisons with Hall mobility are provided. Evaluation of different
normalGaAs
substrate material is described. A wide range of implantation and annealing conditions for S and Se in
normalGaAs
have been explored. S implantation of
5×1012/cm2
with a 850°C, 20 min anneal is found to produce FET quality layers.