Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition

Takikawa, Hirofumi; Matsui, Takaaki; Sakakibara, Tateki; Bendavid, Avi; Martin, Philip

doi:10.1016/s0040-6090(99)00054-1

Cited by 132 publications

(67 citation statements)

References 24 publications

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“…25 UV-visible spectra of the amorphous TiO 2 film used in this work showed that the main absorption edge was situated at ϳ320 nm, corresponding to an optical bandgap of 3.95 eV, whereas the absorption edge for anatase TiO 2 was at ϳ380 nm ͑3.2 eV͒. 26 It is reported that the increase in the bandgap energies of TiO 2 film may be caused by a change in band structure as a result of small crystallite sizes. 27 As a result, irradiation of a UV light with a wavelength of less than 320 nm would generate excited electron/hole pairs, enabling the use of photocatalytic properties.…”

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confidence: 64%

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Low-Temperature Fabrication of Zinc Oxide Micropatterns Using Selective Electroless Deposition

Kim¹,

Noh²,

Song³

et al. 2005

Electrochem. Solid-State Lett.

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Zinc oxide ͑ZnO͒ micropatterns were synthesized site-selectively on photocatalytically activated regions of TiO 2 in an aqueous solution of zinc nitrate and dimethylamine-borane at 55°C by an electroless deposition process. The as-deposited ZnO micropatterns showed a polycrystalline wurtzite structure with a thickness of approximately 0.1 m. The ZnO micropatterns emitted ultraviolet light at 380 nm due to the recombination of bound excitons and broad visible-light luminescence ͑500-800 nm͒. Since the first report of ultraviolet by lazer from zinc oxide ͑ZnO͒, 1,2 substantial effort has been devoted to the development of synthetic methodologies for ZnO films. Among the various techniques described in the literature, evaporation and condensation processes are favored for their simplicity and high-quality products, but these gas-phase approaches generally require economically prohibitive temperatures of 800-900°C.3,4 Despite recent metallorganic chemical vapor deposition ͑MOCVD͒ schemes that reduced the deposition temperature to 450°C by using organometallic zinc precursors, 5 the commercial potential of gas-phase grown ZnO films remains constrained by the size and cost of the vapor deposition systems. Thus, a low-temperature, large-scale, and versatile synthetic process is needed before ZnO can have realistic applications in solar energy conversion, 6 light emission, 7 and other promising areas. [8][9][10] Solution approaches to ZnO films are appealing because of their low growth temperatures and good potential for scale-up. Because of this, Izaki et al. developed an electroless deposition ͑ELD͒ method for polycrystalline particulate ZnO films that is based on the reduction of nitrate ions and that uses dimethylamine borane ͑DMAB͒.11,12 By immersing substrates in an aqueous solution maintained at ϳ60°C, crystalline ZnO particulate films were obtained on the Pd catalyst particles attached to the substrates. However, in spite of the importance of the solution approaches to the fabrication of ZnO films, the chemical deposition mechanism of the ZnO film from aqueous solution is controversial, and several mechanisms have been proposed. Izaki et al. explained that the reduction reaction of the nitrate ion plays an important role in ZnO formation from the solution and is driven by the oxidation reaction of DMAB contained in the solution.11,12 It was also proposed that the deposition mechanism of the ZnO film originates from precipitation of Zn͑OH͒ 2 by the reduction of oxygen, 13,14 and participation of superoxide radicals by the reduction of oxygen. 15Selective ELD has recently become very promising for micro-/ nanostructuring a wide range of materials; that is, a method in which metal is electrolessly plated up from a predetermined pattern. In particular, it is proving increasingly useful in semiconductor and packaging technologies. A major requirement prior to performing selective ELD is the catalytic Pd seed ͑the placement and activation of the seed on the surface͒ and its selectivity: the seed must be confined to sp...

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mentioning

confidence: 64%

“…26 It is reported that the increase in the bandgap energies of TiO 2 film may be caused by a change in band structure as a result of small crystallite sizes. 27 As a result, irradiation of a UV light with a wavelength of less than 320 nm would generate excited electron/hole pairs, enabling the use of photocatalytic properties.…”

Section: 23mentioning

confidence: 99%

Low-Temperature Fabrication of Zinc Oxide Micropatterns Using Selective Electroless Deposition

Kim¹,

Noh²,

Song³

et al. 2005

Electrochem. Solid-State Lett.

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“…It was reported that oxygen enough for reacting with titanium would produce TiO 2 , while low O 2 pressure would preferably produce TiO [29]. Moreover, for the as-deposited TiO 2 amorphous films by using conventional unfiltered vacuum arc deposition, the refractive index of the film decreased with the pressure of O 2 [30]. From these results it is suggested that TiO 2 had the lowest refractive index n among all the titanium oxides.…”

Section: Chemical Composition Changes Of the Native Ti Oxides Layermentioning

confidence: 92%

“…† Corresponding author: zb-xia@aist.go.jp nium oxides (mainly TiO 2 ) produced by various techniques such as sol-gel [13], chemical vapour deposition (CVD) [14], physical vapour deposition (PVD) and electrochemical anodization of bulk titanium (galvanostatic, potentiostatic or potentiodynamic pathways) [15], and reactive cathodic vacuum arc deposition [16]. Due to its remarkable optical, electronic, and chemical properties, titanium dioxide (TiO 2 ) film has been widely used in many fields of optical coating and protective layer on lenses and optical fibers, humidity and gas sensors, gate electrodes in semiconductors, photocatalytic purifier in environmental cleaning and photochemical solar cells.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic ellipsometrical studies of UV irradiation effects on the surface properties of the ultra thin native oxide film on titanium

Nanjo

Xia

Yao

et al. 2005

e-J. Surf. Sci. Nanotech.

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Under ultraviolet (UV) irradiation, an ultra thin titanium native oxides film covered by a hydrocarbon contamination (HC) layer on the as-deposited titanium film was investigated by using spectroscopic ellipsometry (SE), atomic force microscopy (AFM) and contact angle meter. Using a stable silicon dioxide sample as a reference provided an insight of the structural change of the titanium native oxide film under UV irradiation. The SE results indicate that UV irradiation can completely remove the adsorbed HC layer both on the Ti sample and on Si sample after 337 min and 4059 min respectively. The titanium native oxide accelerates the HC removing process. The pseudo-optical constants (pseudo-n and pseudo-k) of the Ti composite and the thickness of the surface layer on Ti decreased during UV irradiation, which was considered to be contributed to the changes of the surface properties of the titanium composite film. AFM images on the surface of UV-treated titanium native oxide films present a less root-mean-square (RMS) roughness and many isolated gains with a size of about 10 nm.

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“…This phenomenon always causes a breakdown of the deposition process, resulting in low production efficiency [8], and even worse, it electronically penetrates the growing film, leading to poor film quality [9].…”

Section: Introductionmentioning

confidence: 99%

Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study

Zhang

Liu

Yang

et al. 2013

Surface and Coatings Technology

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Properties of titanium oxide film prepared by reactive cathodic vacuum arc deposition

Cited by 132 publications

References 24 publications

Low-Temperature Fabrication of Zinc Oxide Micropatterns Using Selective Electroless Deposition

Low-Temperature Fabrication of Zinc Oxide Micropatterns Using Selective Electroless Deposition

Spectroscopic ellipsometrical studies of UV irradiation effects on the surface properties of the ultra thin native oxide film on titanium

Influence of pulsed bias on TiO2 thin films prepared on silicon by arc ion plating: Experimental and simulation study

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