Proposal and Analysis of Mixed CNT Bundle for Sub-Threshold Interconnects

Singh, Ashish; Dhiman, Rohit

doi:10.1109/tnano.2019.2919445

Cited by 15 publications

(6 citation statements)

References 13 publications

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“…However, an in-depth analysis of the subthreshold performance of Cu-CNT composite based interconnects in ICs which require low to medium performance is still lacking. Our previous research work has successfully established the potential of CNT bundle for subthreshold interconnects [15]. Thus, it seems reasonable to extend the analysis for Cu-CNT composites to meet the nearfuture challenges such as higher crosstalk delay and degraded reliability of sub-threshold interconnects, which is the main impetus behind this research study.…”

Section: Introductionmentioning

confidence: 93%

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Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects

Singh

Kaushik

Dhiman

2022

IEEE Open J. Nanotechnol.

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The sub-threshold regime is suited for applications requiring ultra-low power consumption with low to medium frequency (tens to hundreds of MHz) of operation. Therefore, this paper presents electrical modeling and comprehensive analysis of copper-carbon nanotube (Cu-CNT) composite interconnects for sub-threshold circuit design. At lower operating frequencies, the effective complex conductivity of Cu-CNT composites in the nanoscale is formulated by developing an analytical model. Based on the proposed equivalent single conductor model, the frequency-dependent resistance and inductance of composite interconnects are computed. Finally, the sub-threshold crosstalk effect, transfer gain, and Nyquist stability of coupled Cu-CNT composite interconnect are analyzed using ABCD matrix approach.

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Section: Introductionmentioning

confidence: 93%

“…The coefficients c1, c2, c3, and c4 depend on the parameters of sub-DIL system and can be referred in [15]. The effect of metallic fraction variation on the frequency response of three coupled Cu-SWB composite interconnects under in-phase (k1 = k2 = 1) and out-phase (k1 = 1, k2 = -1) switching modes is presented in Fig.…”

Section: B Transfer Gainmentioning

confidence: 99%

Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects

Singh

Kaushik

Dhiman

2022

IEEE Open J. Nanotechnol.

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“…The outer diameter and the intershell spacing of CNTs are denoted as d max and δ = 0.34 nm, respectively [27]. However, for a given mean diameter

{\overset{false¯}{d}}_{\max}

and standard deviation

σ_{d_{\max}}

, the number of tube counts in a bundle N ( d max ) having particular outer diameter d max are disseminated by following the normal Gaussian distribution as [12, 23]

N ()(, d_{\max}) = \frac{N_{bundled}}{2.51 σ_{d_{\max}}} \exp [- 0.5 {(\frac{d_{normalmax} - {\overset{false¯}{d}}_{normalmax}}{σ_{d_{normalmax}}})}^{2}]

whereas

N_{bundled} = \sum_{d_{1}}^{d_{\max}} n_{W_{normalMCB}} \times n_{H_{normalMCB}}

is referred as the total number of CNTs in a bundle. Hence, by using (1) and (2), the distribution probability and their respective area required within the bundle dimensions for each d max of CNTs is obtained.…”

Section: Mcb Configuration and Modellingmentioning

confidence: 99%

“…Depending on the total number of shells, the number of conducting channels (

N_{normaltotal, j}

) can be expressed as

N_{normaltotal, j} = N_{T}^{dis} \times \sum_{j = i + 2 δ}^{d_{\max}} N_{ch, j} .

The interconnect line exhibits scattering resistance if the length of the nanotube is more than the MFP that mainly occurs due to the static impurity scattering, defects, and acoustic phonon scattering etc. [12, 30]. The p.u.l.…”

Section: Mcb Configuration and Modellingmentioning

confidence: 99%

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

Kumbhare

Paltani

Majumder

2020

IET Circuits, Devices & Systems

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“…1,2 The CNT liners provide wonderful electrical, mechanical and thermal properties in TSVs. [15][16][17][18] The SWCNT and MWCNT are two types of CNTs where the SWCNT have single nanotube and MWCNT have multiple nanotubes. The SWCNT acts either as semi-conductor or conductor depending on chiral value, while the MWCNT act only as conductor.…”

mentioning

confidence: 99%

Analysis of Crosstalk Effects for Ternary Logic MWCNT Bundled Through Silicon Vias

Basha¹,

Venkatramana²

2023

ECS J. Solid State Sci. Technol.

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We present a technique to improve the crosstalk effects in ternary coupled through silicon vias (TSVs). The effects of crosstalk were investigated in TSVs using multi-walled carbon nanotube (MWCNT) as metallic liner and polymers such as polyimide, polypropylene carbonate, and benzocyclobutene (BCB) as dielectric liners. The circuit model for coupled TSVs driven by a ternary inverter was utilized to analyze the various crosstalk issues. The HSPICE tool was utilized to develop the proposed TSVs. The crosstalk issues for the MWCNT TSVs were investigated and compared to single-walled CNT (SWCNT) TSVs. Moreover, the power, power delay product, and energy delay product were analyzed and compared to SWCNT TSVs. All of the performances were also studied for different TSV pitches. The coupled TSVs with BCB showed high performance for the large pitch values. Moreover, it was noted that the coupled TSVs with BCB at 5000μm TSV pitch improved the performance up to 40.03% over the SWCNT TSVs.

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Proposal and Analysis of Mixed CNT Bundle for Sub-Threshold Interconnects

Cited by 15 publications

References 13 publications

Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects

Modeling and Analysis of Cu-Carbon Nanotube Composites for Sub-Threshold Interconnects

Performance analysis of mixed CNT bundle interconnects at 10 nm technology

Analysis of Crosstalk Effects for Ternary Logic MWCNT Bundled Through Silicon Vias

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