Proposal and experimental demonstration of monolithic InP/InGaAsP polarization modulator

Kawabata, Yasujiro; Zaitsu, Masaru; Tanemura, Takuo; Nakano, Yoshiaki

doi:10.1109/ecoc.2014.6963940

Cited by 10 publications

(10 citation statements)

References 8 publications

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“…For proof-of-concept demonstration, we have fabricated a SV modulator on InP [7]. In this work, for ease of fabrication, instead of using MQW layer for PS-PM as shown in Fig.…”

Section: Device Fabrication and Demonstrationmentioning

confidence: 99%

“…To this end, we have been developing novel compact Stokes vector (SV) modulators and receivers realized on monolithic InP platforms [7]- [11]. With the ability of integrating lasers and other active components, the proposed devices may be the attractive candidates to realize ultracompact and low-cost SVM-DD transceivers for the future short-reach (< 100 km) optical data links.…”

Section: Introductionmentioning

confidence: 99%

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Compact InP Stokes-Vector Modulator and Receiver Circuits for Short-Reach Direct-Detection Optical Links

Tanemura

Nakano

2018

IEICE Trans. Electron.

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To meet the demand for continuous increase in data traffic, full usage of polarization freedom of light is becoming inevitable in the next-generation optical communication and datacenter networks. In particular, Stokes-vector modulation direct-detection (SVM-DD) formats are expected as potentially cost-effective method to transmit multi-level signals without using costly coherent transceivers in the short-reach links. For the SVM-DD formats to be practical, both the transmitter and receiver need to be substantially simpler, smaller, and lower-cost as compared to coherent counterparts. To this end, we have recently proposed and demonstrated novel SV modulator and receiver circuits realized on monolithic InP platforms. With compact non-interferometric configurations, relatively simple fabrication procedures, and compatibility with other active photonic components, the proposed devices should be attractive candidate in realizing low-cost monolithic transceivers for SVM formats. In this paper, we review our approaches as well as recent progresses and provide future prospects.

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“…For proof-of-concept demonstration, we have fabricated a SV modulator on InP [7]. In this work, for ease of fabrication, instead of using MQW layer for PS-PM as shown in Fig.…”

Section: Device Fabrication and Demonstrationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Compact InP Stokes-Vector Modulator and Receiver Circuits for Short-Reach Direct-Detection Optical Links

Tanemura

Nakano

2018

IEICE Trans. Electron.

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“…Similarly, we have recently proposed and demonstrated a monolithic InP polarization modulator, consisting of the half-ridge polarization converter (PC) and polarization-dependent phase shifter (PD-PS) sections [9]. The half-ridge scheme offers a unique advantage that it can be fabricated by relatively simple self-aligned process and exhibits great compatibility with other ridge waveguide components [10,11].…”

Section: Introductionmentioning

confidence: 99%

“…The half-ridge scheme offers a unique advantage that it can be fabricated by relatively simple self-aligned process and exhibits great compatibility with other ridge waveguide components [10,11]. Proof-of-concept device was fabricated and demonstrated experimentally using the Pockels effect inside the bulk InGaAsP core layer [9].…”

Section: Introductionmentioning

confidence: 99%

Design and experimental investigation of monolithic polarization controller with InGaAlAs/InAlAs multiple quantum wells

Suzuki

Kawabata

Tanemura

et al. 2015

2015 International Conference on Photonics in Switching (PS)

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“…A wide range of such waveguidebased devices for controlling polarization has been established, based on the principle of waveguide modebeating [1] and mode evolution. However most of these designs are focused on the GaAs-AlGaAs [2], InP-InGaAsP [3], or silicon on insulator material systems [4]. To the best of our knowledge, no polarization modulators have been reported around the wavelength of 2 μm.…”

Section: Introductionmentioning

confidence: 99%

Design of 2 μm Wavelength Polarization Mode Controllers

Xie

Andersson

et al. 2020

2020 International Conference on UK-China Emerging Technologies (UCET)

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A single-slot waveguide for transverse electric (TE) to transverse magnetic (TM) mode conversion operating at wavelengths around 2 μm is proposed based on an InGaSb/AlGaAsSb quantum well structure. The polarization mode convertor has a deep-etched ridge waveguide and a single shallow-etched slot, and can be fabricated in a single stage of dry-etching. The dependence of polarization conversion efficiency on slot width, slot position, slot depth and waveguide length was investigated, and a design that was insensitive to fabrication tolerances was identified. A TE-TM mode conversion efficiency of more than 97% can be obtained in a 2141-μm-long waveguide.

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Proposal and experimental demonstration of monolithic InP/InGaAsP polarization modulator

Cited by 10 publications

References 8 publications

Compact InP Stokes-Vector Modulator and Receiver Circuits for Short-Reach Direct-Detection Optical Links

Compact InP Stokes-Vector Modulator and Receiver Circuits for Short-Reach Direct-Detection Optical Links

Design and experimental investigation of monolithic polarization controller with InGaAlAs/InAlAs multiple quantum wells

Design of 2 μm Wavelength Polarization Mode Controllers

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